Acta Physica Sinica, Volume. 69, Issue 15, 157303-1(2020)

Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor

Xue-Bing Zhang... Nai-Zhang Liu and Ruo-He Yao* |Show fewer author(s)
Author Affiliations
  • School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
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    Figures & Tables(6)
    Device structure diagram of AlGaN/GaN HEMT.
    A schematic diagram of polarization caused by a longitudinal optical wave.
    Mobility limited by polar optical phonon scattering as a function of temperature.
    Polar optical phonon scattering dependence on temperature for different n2D.
    Curve of polar optical phonon scattering versus optical phonon energy ћωLO.
    • Table 1. Parameters of GaN used for the calculations.

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      Table 1. Parameters of GaN used for the calculations.

      参数符号/单位取值
      介电常数(低频)ε/F·m–110.4ε0[18]
      介电常数(高频)ε/F·m–15.47ε0[18]
      电子有效质量m*/kg 0.22m0[19]
      声子能量ћωLO/meV 91.2[19]
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    Xue-Bing Zhang, Nai-Zhang Liu, Ruo-He Yao. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor[J]. Acta Physica Sinica, 2020, 69(15): 157303-1

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    Paper Information

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    Received: Feb. 19, 2020

    Accepted: --

    Published Online: Dec. 30, 2020

    The Author Email:

    DOI:10.7498/aps.69.20200250

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