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Photonics Research, Volume. 8, Issue 3, 352(2020)

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform

Christian Lafforgue1、†,*, Sylvain Guerber1,2、†, Joan Manel Ramirez3, Guillaume Marcaud1, Carlos Alonso-Ramos1, Xavier Le Roux1, Delphine Marris-Morini1, Eric Cassan1, Charles Baudot2, Frédéric Boeuf2, Sébastien Cremer2, Stéphane Monfray2, and Laurent Vivien1
Author Affiliations
  • 1Centre for Nanoscience and Nanotechnology (C2N), CNRS, Université Paris-Sud, Université Paris-Saclay, UMR 9001, 91405 Orsay Cedex, France
  • 2Technologie R&D, STMicroelectronics, SAS, 850 rue Jean Monnet, 38920 Crolles, France
  • 3III-V lab, a joint venture from Nokia Bell Labs, Thales and CEA, 1 Avenue Augustin Fresnel, 91767 Palaiseau Cedex, France
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    Article index updated:May. 14, 2024

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    The article is cited by 29 article(s) from Web of Science.
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    Christian Lafforgue, Sylvain Guerber, Joan Manel Ramirez, Guillaume Marcaud, Carlos Alonso-Ramos, Xavier Le Roux, Delphine Marris-Morini, Eric Cassan, Charles Baudot, Frédéric Boeuf, Sébastien Cremer, Stéphane Monfray, Laurent Vivien. Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform[J]. Photonics Research, 2020, 8(3): 352

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    Paper Information

    Category: Silicon Photonics

    Received: Oct. 2, 2019

    Accepted: Jan. 5, 2020

    Published Online: Feb. 21, 2020

    The Author Email: Christian Lafforgue (christian.lafforgue@c2n.upsaclay.fr)

    DOI:10.1364/PRJ.379555

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology