Control of GaN inverted pyramids growth on <i>c</i>-plane patterned sapphire substrates

Luming Yu; Xun Wang; Zhibiao Hao; Yi Luo; Changzheng Sun; Bing Xiong; Yanjun Han; Jian Wang; Hongtao Li; Lin Gan; Lai Wang

doi:10.1088/1674-4926/24010013

Journal of Semiconductors, Volume. 45, Issue 6, 062501(2024)

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Luming Yu, Xun Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, and Lai Wang^*

Author Affiliations

Beijing National Research Center for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China

show less

References(23)

[1] X L Cai, C L Du, Z X Sun et al. Recent progress of physical failure analysis of GaN HEMTs. J Semicond, 42, 051801(2021).

[2] M Meneghini, C De Santi, I Abid et al. GaN-based power devices: Physics, reliability, and perspectives. J Appl Phys, 130, 181101(2021).

[3] Y Q Li, X W Wang, N Zhang et al. Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer. J Semicond, 43, 072801(2022).

[4] F Liang, J Yang, D G Zhao et al. Room-temperature continuous-wave operation of GaN-based blue-violet laser diodes with a lifetime longer than 1000 H. J Semicond, 40, 022801(2019).

[5] F Liang, D G Zhao, Z S Liu et al. GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature. J Semicond, 42, 112801(2021).

[6] S Nakamura. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 281, 955(1998).

[7] J Yang, D G Zhao, Z S Liu et al. A 357.9 nm GaN/AlGaN multiple quantum well ultraviolet laser diode. J Semicond, 43, 010501(2022).

[8] D G Zhao. III-nitride based ultraviolet laser diodes. J Semicond, 40, 120402(2019).

[9] D F Feezell, M C Schmidt, S P DenBaars et al. Development of nonpolar and semipolar InGaN/GaN visible light-emitting diodes. MRS Bull, 34, 318(2009).

[10] J S Speck, S F Chichibu. Nonpolar and semipolar group III nitride-based materials. MRS Bull, 34, 304(2009).

[11] J Cho, E F Schubert, J K Kim. Efficiency droop in light-emitting diodes: Challenges and countermeasures. Laser Photonics Rev, 7, 408(2013).

[12] C Xu, C D Zheng, X M Wu et al. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs. J Semicond, 40, 052801(2019).

[13] K Rajabi, J X Wang, J Jin et al. Improving modulation bandwidth of c-plane GaN-based light-emitting diodes by an ultra-thin quantum wells design. Opt Express, 26, 24985(2018).

[14] T Zhi, T Tao, X Y Liu et al. Low-threshold lasing in a plasmonic laser using nanoplate InGaN/GaN. J Semicond, 42, 122803(2021).

[15] R S Peng, S R Xu, X M Fan et al. Application of nano-patterned InGaN fabricated by self-assembled Ni nano-masks in green InGaN/GaN multiple quantum wells. J Semicond, 44, 042801(2023).

[16] T Wunderer, M Feneberg, F Lipski et al. Three-dimensional GaN for semipolar light emitters. Phys Status Solidi B, 248, 549(2011).

[17] B L Ward, O H Nam, J D Hartman et al. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. J Appl Phys, 84, 5238(1998).

[18] F Scholz, T Wunderer, B Neubert et al. GaN-based light-emitting diodes on selectively grown semipolar crystal facets. MRS Bull, 34, 328(2009).

[19] M D Brubaker, S M Duff, T E Harvey et al. Polarity-controlled GaN/AlN nucleation layers for selective-area growth of GaN nanowire arrays on Si(111) substrates by molecular beam epitaxy. Cryst Growth Des, 16, 596(2016).

[20] L Wang, X Wang, F Bertram et al. Color-tunable 3D InGaN/GaN multi-quantum-well light-emitting-diode based on microfacet emission and programmable driving power supply. Adv Opt Mater, 9, 2001400(2021).

[21] C Herring. Some theorems on the free energies of crystal surfaces. Phys Rev, 82, 87(1951).

[22] K Hiramatsu, K Nishiyama, A Motogaito et al. Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides: Effects of reactor pressure in MOVPE growth. Phys Stat Sol (a), 176, 535(1999).

[23] P Kung, C J Sun, A Saxler et al. Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates. J Appl Phys, 75, 4515(1994).

Tools

Get Citation

Copy Citation Text

Luming Yu, Xun Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Lin Gan, Lai Wang. Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates[J]. Journal of Semiconductors, 2024, 45(6): 062501

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Articles

Received: Jan. 9, 2024

Accepted: --

Published Online: Jul. 8, 2024

The Author Email: Wang Lai (LWang)

DOI:10.1088/1674-4926/24010013

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology