Study On Optical Communications, Volume. 49, Issue 2, 63(2023)
The 980 nm Pump Laser with Output Power of 400 mW
Figures & Tables(9)
Table 1. Die epitaxial structure
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结构 材料 浓度 厚度/μm p＋上限制层 GaAs 2E19 0.15 p－上限制层 Al0.5Ga0.5As 1E18 1.00 上波导层 Al0.3Ga0.7As － 0.25 量子垒 GaAs － 0.05 应变量子阱 InxGaAs － 0.06 量子垒 GaAs － 0.05 下波导层 Al0.3Ga0.7As － 0.25 n－ 下限制层 Al0.4Ga0.6As 5E17 1.20 N＋衬底 GaAs 2E18 －
Table 2. Simulation results of different structures
View tableView in ArticleTable 2. Simulation results of different structures
方案 厚度/mm 光纤耦合点相对LD 的位移/μm TEC底板上的最大应力/MPa 底板 内腔 安装部位 TEC所在部位 1 1.5 1.5 0.8 2.64 132.7 2 1.5 1.5 1.5 3.44 190.5 3 1.5 1.0 1.5 3.45 164.6 4 1.5 1.5 1.0 3.67 166.3
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Jun LIU, Bo-zhong LI, Fang CHENG, Zi-fan LI, Zhao-yu TIAN, Sheng-qi QIAN, Yu WU, Xue-yang QU, Rui LIU. The 980 nm Pump Laser with Output Power of 400 mW[J]. Study On Optical Communications, 2023, 49(2): 63
Paper Information
Category: Research Articles
Received: May. 5, 2022
Accepted: --
Published Online: Apr. 24, 2023
The Author Email: Rui LIU (09424@accelink.com)
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