[1] [1] ZHANG Z X. Laser Raman-type distributed optical fiber temperature sensor system［J］. Acta Optica Sinica, 1995, 15(11):1585-1589.(in Chinese)

[2] [2] WANG J H, YAO H B, XUE ZH J, et al.. Design of sending circuit for laser short range dynamic detection system［J］. Infrared and Laser Engineering, 2006, 35:709-712.(in Chinese)

[3] [3] YAO SH, TAO G T, LU G G, et al.. 1 060 nm wavelength high power diode array module ［J］. Opt. Precision Eng., 2006, 14(1): 8-11.(in Chinese)

[4] [4] DAI Q, SONG W W, WANG X J. Design and stability analysis of high frequency LDs driving circuit ［J］. Opt. Precision Eng., 2006, 14(5): 745-748.(in Chinese)

[5] [5] BU H Y, LIN Y K, MENG ZH H. Research of centimeter-level ranging technology based on ultra-narrow pulsed laser ［J］. Laser&Infrared, 2009, 39(8): 880-883.(in Chinese)

[6] [6] LIU Y T.High Frequency Ultra Short Pulse Blue-voilet Laser Diode［D］.Beijing: Graduate University of the Chinese Academy of Sciences, 2009.(in Chinese)

[7] [7] MA X ZH, HUO J, QU Y, et al..Temperature characteristics of 808 nm semiconductor lasers［J］. Laser & Infrared, 2010, 40(12): 1306-1309.(in Chinese)

[8] [8] WANG L J, TONG C ZH, YANG Y, et al.. Optical spectral characteristics of Bragg reflection waveguide lasers［J］. Chinese Journal of Luminescence, 2013, 34(9): 1227-1232.(in Chinese)

[9] [9] HAO M M, ZHU H B, QIN L, et al.. Research on high brightness fiber coupled diode laser module with hundred watts class output power［J］. Chinese Journal of Luminescence, 2012, 33(6): 651-659. (in Chinese)

[10] [10] ZHANG X W, NING Y Q, QIN L, et al.. Stable polarization control of 980 nm high-power vertical-cavity surface-emitting lasers using sub-wavelength rectangular-metal-gratings［J］. Chinese Journal of Luminescence, 2013, 34(9): 1188-1193. (in Chinese)

[11] [11] MOLINA L L, MAR A, ZUTAVERN F J, et al.. Sub-nanosecond avalanche transistor drivers for low impedance pulsed power applications ［J］. Pulsed Power Plasma Science, IEEE Conference Record-Abstracts, 2001: 178-181.

[12] [12] VAINSHEIN S N, KOSTAMOVAARA J T, MYLLYLA R A, et al..Automatic switching synchronization of serial and parallel avalanche transistor ［J］. Electronic Letters, 1996, 32(11): 950-952.

[13] [13] VAINSHEIN S N, KOSTAMOVAARA J T, KILPELA A J, et al.. High speed, high current driver for operation with low ohmic load ［J］. Electronic Letters, 1997, 33(10): 904-906.

[14] [14] WANG P CH, DENG Y L, ZHANG L P, et al.. High brightness fiber coupled diode laser module ［J］. Chinese Journal of Luminescence, 2012, 33(12): 1335-1341.(in Chinese)

[15] [15] LI X, GU G G. Narrow pulse laser driver design based on power transistors ［J］. Laser & Infrared, 2013, 43(5): 544-549.(in Chinese)

[16] [16] CUI J L, LIU X K, GENG ZH X, et al.. Integrative driving circuit and its layout of pulsed laser diode ［J］. Journal of Detection & Control, 2012, 34(5): 5-10. (in Chinese)

[17] [17] XU H, NIU CH F, LI B Y, et al.. Design of a new nanosecond GPR pulse source ［J］. Chinese Journal of Scientific Instrucment, 2011, 32(11): 2449-2454.(in Chinese)

[18] [18] YANG J G, XIE J, LI H Y, et al.. Narrow pulse source of high-voltage based on step recovery diode driven by transistor［J］. Journal of Detection & Control, 2012, 34(1): 24-27.(in Chinese)

[19] [19] CHEN Y CH, ZHAO B Q, LI W. High peak power semiconductor laser module for producing nanoseconds pulse［J］. Opt. Precision Eng., 2009, 17(4);695-699.(in Chinese)

[20] [20] DANG J M, ZHAI B, GAO Z L, et al.. Nanosecond driver for multiple pulse-modulated infrared quantum cascade laser［J］. Opt. Precision Eng., 2013, 21(9): 2209-2216.(in Chinese)

[21] [21] LI D, MA J J, GENG H W. Research on high pulse constant current source for the semiconductor laser ［J］.Measurement & Control Technology, 2012, 31(8): 5-8.(in Chinese)

[22] [22] PRINCE P R. Paralleling avalanche transistor［J］. Proc. IEEE, 1965, 53:304.

[23] [23] HANSE J P, SCHMIDT W A. A fast risetime avalanche transistor pulse generator for driving injection lasers ［J］. Proc. IEEE, 1967, 55(2):216-217.