Fig. 1. Field-effect transistors are used in sensors^［10］，integrated circuits，microprocessors，chips and display screens

Fig. 2. Schematic diagram of bottom-gate top-contact field-effect transistor and three-dimensional perovskite crystal structure

Fig. 3. Ion migration path in perovskite

Fig. 4. The relationships between activation energy and grain size and lattice strain

Fig. 5. Local dark current in grain boundary and grain and morphology of perovskite films before and after PEIE treatment

Fig. 6. Doping passivation and grain boundary passivation of tin-based perovskite

Fig. 7. Electrical characterization of perovskite with different dimensions

Fig. 8. Performance comparison of perovskite before and after dimension regulation

Fig. 9. Output characteristic curves of MAPbI₃ and RbCsFAMAPbI₃ measured at 300 K

Fig. 10. Effects of Cs⁺ doping on perovskite lattice，formation phase，vacancy formation energy and carrier lifetime