Acta Photonica Sinica, Volume. 50, Issue 10, 1016002(2021)
Ion Migration in Perovskite Field-effect Transistors(Invited)
Field-effect transistors are the key component of modern electronic technology, which can control the on/off states of circuit by varying voltages. With the emergence of more new semiconductor materials, the selection of channel materials for field-effect transistors is much more diversified. In recent years, perovskite materials, as a new type of organic-inorganic hybrid semiconductor material, has developed rapidly in the fields of photovoltaic devices and light-emitting diodes, but their development in field-effect transistors have been restricted due to the serious intrinsic ion migration. Ion migration in perovskite materials can lead to partial shielding of grid electric field, which greatly affects the modulation of grid and reduces the field-effect mobility. Here, we systematic elaborate the mechanism of ion migration, and then summarize several methods that can inhibit the ion migration. Finally, the development of perovskite transistors is also prospected.
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Xue DONG, Peng CHENG, Peiyao GUO, Guohua LIU, Yiqun LI, Zhongbin WU, Yonghua CHEN, Wei HUANG. Ion Migration in Perovskite Field-effect Transistors(Invited)[J]. Acta Photonica Sinica, 2021, 50(10): 1016002
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Received: Jul. 19, 2021
Accepted: Aug. 18, 2021
Published Online: Nov. 3, 2021
The Author Email: WU Zhongbin (iamzbwu@nwpu.edu.cn), CHEN Yonghua (iamychen@njtech.edu.cn), HUANG Wei (vc@nwpu.edu.cn)