Fig. 1. The schematic diagram of the external and epitaxial structure of the high-peak power semiconductor laser array device

Fig. 2. Test curve and near field spot of high peak power semiconductor laser array

Fig. 3. The experiment setup

Fig. 4. Wavelength and corresponding external strain at each emitter position

Fig. 5. Wavelength and spectrum at each emitter position in the array under given test conditions

Fig. 6. Wavelength shift caused by temperature change and power at each emitter position in the array

Fig. 7. Slope efficiency and normalized threshold current at each emitter position under 10% (500 μs, 200 Hz) duty cycle