Theoretical Simulation of Charge Transfer Loss Degradation of CMOS Image Sensor Induced by Displacement Damage

Xie Yang; Yonggang Huo; Zujun Wang; Aiguo Shang; Yuanyuan Xue; Tongxuan Jia

doi:10.3788/AOS202242.0723002

Acta Optica Sinica, Volume. 42, Issue 7, 0723002(2022)

Theoretical Simulation of Charge Transfer Loss Degradation of CMOS Image Sensor Induced by Displacement Damage

Xie Yang¹, Yonggang Huo^1、*, Zujun Wang^2、**, Aiguo Shang¹, Yuanyuan Xue², and Tongxuan Jia³

Author Affiliations

¹Xi′an Research Institute of High-Technology, Xi′an, Shaanxi 710024, China

²State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi′an, Shaanxi 710024, China

³School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China

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Xie Yang, Yonggang Huo, Zujun Wang, Aiguo Shang, Yuanyuan Xue, Tongxuan Jia. Theoretical Simulation of Charge Transfer Loss Degradation of CMOS Image Sensor Induced by Displacement Damage[J]. Acta Optica Sinica, 2022, 42(7): 0723002

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Paper Information

Category: Optical Devices

Received: Aug. 30, 2021

Accepted: Oct. 25, 2021

Published Online: Mar. 28, 2022

The Author Email: Huo Yonggang (huoarmy@163.com), Wang Zujun (wangzujun@nint.ac.cn)

DOI:10.3788/AOS202242.0723002

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