Microelectronics, Volume. 53, Issue 1, 55(2023)

A Fully Integrated GaN Level Shifter with Negative Rail Compatibility and High dv/dt Immunity

ZHANG Yongyu1... YE Zikai1, SHI Jiawei1, QIN Yao1, MING Xin1, WANG Zhuo1, and ZHANG Bo12 |Show fewer author(s)
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    References(8)

    [1] [1] KAUFMANN M, SEIDEL A, WICHT B. Long, short, monolithic-the gate loop challenge for GaN drivers: invited paper [C] // IEEE CICC. Boston, MA, USA. 2020: 1-5.

    [2] [2] CHEN H Y, KAO Y Y, ZHANG Z Q, et al. A fully integrated GaN-on-silicon gate driver and GaN switch with temperature-compensated fast turn-on technique for improving reliability [C] // IEEE ISSCC. San Francisco, CA, USA. 2021: 460-462.

    [3] [3] MOENCH S, REINER R, WALTEREIT P, et al. Investigation of GaN-on-Si and GaN-on-SOI substrate capacitances for discrete and monolithic half-bridges [C] // 33rd ISPSD. Nagoya, Japan. 2021: 335-338.

    [4] [4] NOIKE S, NAGAO J, FURUTA J, et al. An asynchronous buck converter by using a monolithic GaN IC integrated by an enhancement-mode GaN-on-SOI process [C] // IEEE 8th WiPDA. Redondo Beach, CA, USA. 2021: 215-219.

    [5] [5] MING X, ZHANG X, ZHANG Z W, et al. A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise- immunity level shifter [C] // IEEE 30th ISPSD. Chicago, IL, USA. 2018: 355-358.

    [6] [6] KAUFMANN M, WICHT B. A monolithic GaN-IC with integrated control loop for 400-V offline buck operation achieving 95.6% peak efficiency [J]. IEEE J Sol Sta Circ, 2020, 55(12): 3169-3178.

    [7] [7] ZHANG Y W, ZHU J, SUN W F, et al. A capacitive-loaded level shift circuit for improving the noise immunity of high voltage gate drive IC [C] // IEEE 27th ISPSD. Hong Kong, China. 2015: 173-176.

    [8] [8] LIU D, HOLLIS S J, DYMOND H C P, et al. Design of 370-ps delay floating-voltage level shifters with 30-V/ns power supply slew tolerance [J]. IEEE Trans Circ Syst II: Expr Brie, 2016, 63(7): 688-692.

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    ZHANG Yongyu, YE Zikai, SHI Jiawei, QIN Yao, MING Xin, WANG Zhuo, ZHANG Bo. A Fully Integrated GaN Level Shifter with Negative Rail Compatibility and High dv/dt Immunity[J]. Microelectronics, 2023, 53(1): 55

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    Paper Information

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    Received: Jan. 24, 2022

    Accepted: --

    Published Online: Dec. 15, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.220034

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