Polarization assisted self-powered GaN-based UV photodetector with high responsivity

Jiaxing Wang; Chunshuang Chu; Kangkai Tian; Jiamang Che; Hua Shao; Yonghui Zhang; Ke Jiang; Zi-Hui Zhang; Xiaojuan Sun; Dabing Li

doi:10.1364/PRJ.418813

Photonics Research, Volume. 9, Issue 5, 734(2021)

Polarization assisted self-powered GaN-based UV photodetector with high responsivity

Jiaxing Wang^1,2、†, Chunshuang Chu^1,2、†, Kangkai Tian^1,2, Jiamang Che^1,2, Hua Shao^1,2, Yonghui Zhang^1,2, Ke Jiang³, Zi-Hui Zhang^1,2,4、*, Xiaojuan Sun^3,5、*, and Dabing Li³

Author Affiliations

¹State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China

²Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China

³State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

⁴e-mail: zh.zhang@hebut.edu.cn

⁵e-mail: sunxj@ciomp.ac.cn

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Figures & Tables(7)

Fig. 1. Schematic structures for (a) Device R and (b) Device N. (c) Top view of GaN-based MSM PD showing interdigital electrodes. Schematic energy band diagrams of (d) Device R and (e) Device N.

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Fig. 2. (a) Dark current and photocurrent in terms of the applied bias for Devices R and N. Photocurrent for (b) Device R and (c) Device N in terms of different laser powers. (d) Two-dimensional electric field profiles and (e) current distributions for Devices R and N at the applied bias of 3 V under the 266 nm UV illumination. The bias is applied at the left electrode, such that the positive bias is biased at the left electrode in the first quadrant and the negative bias is biased at the left electrode in the second quadrant. The other electrode is grounded when the devices are measured. The wavelength for the illumination laser is 266 nm. The positive direction for the electric field is defined to point to the right side in (d).

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Fig. 3. (a) Spectral responsivity, (b) and (c) energy band diagrams near the GaN layer surface, and (d) two-dimensional electric field profiles for Devices R and N at the applied bias of 0 V under 266 nm UV illumination. Ec, Ev, Efe, and Efh denote energies of the conduction band, the valence band, and quasi-Fermi levels for electrons and holes, respectively. The positive direction for the electric field is defined to point to the right side in (d).

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Fig. 4. Spectral responsivity for (a) Device R and (b) Device N at different applied biases.

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Fig. 5. Time-dependent photo-response characteristics for (a) Device R and (b) Device N when devices are biased to 3 V. The laser wavelength is 266 nm.

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Table 1. Absorption Coefficient of GaN Under Different Wavelengths

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Table 1. Absorption Coefficient of GaN Under Different Wavelengths

Wavelength (nm)	Absorption Coefficient ( $m^{- 1}$ )
250	$3.355 \times 10^{7}$
260	$3.140 \times 10^{7}$
270	$2.927 \times 10^{7}$
280	$2.714 \times 10^{7}$
290	$2.500 \times 10^{7}$
300	$2.283 \times 10^{7}$
310	$2.058 \times 10^{7}$
320	$1.823 \times 10^{7}$
330	$1.570 \times 10^{7}$
340	$1.287 \times 10^{7}$
350	$9.459 \times 10^{6}$
360	$4.189 \times 10^{6}$
370	$1.704 \times 10^{5}$
380	$6.500 \times 10^{3}$
390	$2.933 \times 10^{2}$
400	$1.545 \times 10^{1}$

Table 2. Performances for the Reported GaN-Based and AlGaN-Based PDs in the Literature

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Table 2. Performances for the Reported GaN-Based and AlGaN-Based PDs in the Literature

Material	Responsivity	Wavelength (nm)	Self-powered	On/Off Ratio	Year	Refs.
GaN	0.00154 A/W at 0 V	340	Yes	–	2016	[36]
GaN	3.096 A/W at 10 V	360	No	$10^{6}$	2017	[16]
${Al}_{0.6} {Ga}_{0.4} N / {Al}_{0.5} {Ga}_{0.5} N$	$10^{6} A / W$ at 5 V	250	No	$5 \times 10^{6}$	2017	[35]
GaN	0.28 A/W at 10 V	325	Yes	$< 10$	2018	[37]
AlGaN	0.115 A/W at 0 V, 0.154 A/W at 3 V	270	Yes	–	2018	[38]
GaN	0.633 A/W at 5 V	325	Yes	$< 10$	2018	[21]
${Al}_{0.4} {Ga}_{0.6} N$	0.30 A/W at 8 V	265	No	$10^{6}$	2019	[2]
GaN	0.147 A/W at 3 V	368	No	$10^{4}$	2019	[39]
Ultra-thin GaN	0.00176 A/W at 0 V	325	Yes	$< 10$	2020	[26]
${Al}_{0.45} {Ga}_{0.65} N$	3.10 A/W at 30 V	250	No	$10^{4}$	2020	[40]
GaN	0.005 A/W at 0 V, 13.56 A/W at 3 V	346	Yes	$10^{6}$	2021	This work

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Jiaxing Wang, Chunshuang Chu, Kangkai Tian, Jiamang Che, Hua Shao, Yonghui Zhang, Ke Jiang, Zi-Hui Zhang, Xiaojuan Sun, Dabing Li. Polarization assisted self-powered GaN-based UV photodetector with high responsivity[J]. Photonics Research, 2021, 9(5): 734

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Paper Information

Category: Optical Devices

Received: Jan. 5, 2021

Accepted: Feb. 23, 2021

Published Online: Apr. 26, 2021

The Author Email: Zi-Hui Zhang (zh.zhang@hebut.edu.cn), Xiaojuan Sun (sunxj@ciomp.ac.cn)

DOI:10.1364/PRJ.418813

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology