[1] Tang H J, Lü Y Q, Zhang K F et al. Short-wavelength infrared InGaAs photodetector for spatial remote sensing[J]. Laser & Optoelectronics Progress, 44, 42-49(2007).

[2] Huang R Y, Zhao W L, Zeng H et al. Development and application of InP-based single photon detectors[J]. Laser & Optoelectronics Progress, 58, 1011009(2021).

[3] Yu Q N, Meng Y H, Li K et al. Luminescence mechanism of InGaAs self-fit well-cluster composite structure with super-wide spectra[J]. Journal of Luminescence, 253, 119435(2023).

[4] Yu Q N, Li X, Jia Y et al. InGaAs-based well-island composite quantum-confined structure with superwide and uniform gain distribution for great enhancement of semiconductor laser performance[J]. ACS Photonics, 5, 4896-4902(2018).

[5] Yu Q N, Zheng M, Tai H X et al. Quantum confined indium-rich cluster lasers with polarized dual-wavelength output[J]. ACS Photonics, 6, 1990-1995(2019).

[6] Lin N, Zhong L, Li H M et al. Strain-compensated multi-quantum well structure semiconductor saturable absorption mirror[J]. Chinese Journal of Lasers, 49, 1101002(2022).

[7] Kryzhanovskaya N V, Moiseev E I, Zubov F I et al. Direct modulation characteristics of microdisk lasers with InGaAs/GaAs quantum well-dots[J]. Photonics Research, 7, 664-668(2019).

[8] Yu H P, Roberts C, Murray R. Influence of indium segregation on the emission from InGaAs/GaAs quantum wells[J]. Applied Physics Letters, 66, 2253-2255(1995).

[9] Schlenker D, Miyamoto T, Chen Z et al. Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers[J]. Journal of Crystal Growth, 209, 27-36(2000).

[10] Bennett S E, Saxey D W, Kappers M J et al. Atom probe tomography assessment of the impact of electron beam exposure on InxGa1–xN/GaN quantum wells[J]. Applied Physics Letters, 99, 021906(2011).

[11] Yuan K, Radhakrishnan K, Zheng H Q et al. Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction[J]. Thin Solid Films, 391, 36-41(2001).

[12] Ferrari C, Bruni M R, Martelli F et al. InGaAs/GaAs strained single quantum well characterization by high resolution X-ray diffraction[J]. Journal of Crystal Growth, 126, 144-150(1993).

[13] Yang T J, Shivaraman R, Speck J S et al. The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior[J]. Journal of Applied Physics, 116, 113104(2014).

[14] Liu Y, Li L, Qiao Z L et al. Optical characteristics of 1.06 μm InGaAs/GaAs quantum well grown by MOCVD[J]. Chinese Journal of Lasers, 41, 1106001(2014).

[15] Xu H W, Ning Y Q, Zeng Y G et al. MOCVD growth of AlGaInAs/AlGaAs quantum well for 852 nm laser diodes studied by reflectance anisotropy spectroscopy[J]. Chinese Journal of Lasers, 39, 0502010(2012).

[16] Jasik A, Wnuk A, Wójcik-Jedlińska A et al. The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods[J]. Journal of Crystal Growth, 310, 2785-2792(2008).

[17] Basu P K, Mukhopadhyay B, Basu R[M]. Semiconductor laser theory(2015).

[18] Goldberg Y A, Schmidt N M[M]. Handbook series on semiconductor parameters, 62-88(1999).

[19] Yu H P, Roberts C, Murray R. Influence of indium segregation on the emission from InGaAs/GaAs quantum wells[J]. Applied Physics Letters, 66, 2253-2255(1995).