High Power Laser Science and Engineering, Volume. 4, Issue 2, 02000e12(2016)

Ultrafast dynamical process of Ge irradiated by the femtosecond laser pulses

Fangjian Zhang1,2, Shuchang Li1,2, Anmin Chen1,2, Yuanfei Jiang1,2, Suyu Li1,2, and Mingxing Jin11,2
Author Affiliations
  • 1Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
  • 2Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy (Jilin University), Changchun 130012, China
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    Figures & Tables(8)
    Time-space evolution of (a) $N$, (b) $T_{e}$, (c) $T_{h}$ and (d) $T_{l}$ in Ge irradiated by laser pulse whose duration, wavelength and fluence are 100 fs, 620 nm and $0.1~\text{mJ}/\text{cm}^{2}$, respectively.
    Time evolution of (a) $N$, (b) $T_{l}$ (c) $T_{e}$ and (d) $T_{h}$ in Ge at different depths.
    Time-space evolution of the value of $T_{h}/T_{e}$. The pulse duration and fluence is 100 fs, and $0.1~\text{mJ}/\text{cm}^{2}$, respectively.
    Spatial evolution of $T_{e}$, $T_{h}$ and $T_{h}/T_{e}$ (right axis) at (a) 0.21, (b) 0, (c) 0.2, (d) 1.0, (e) 2.5 and (f) 8.0 ps.
    Time evolution of (a, c, e) $N$ (b, d, f) $T_{l}$ in Ge irradiated by laser pulses (a,b) with different durations and same intensity $I_{0}$ ($798~\text{MW}/\text{cm}^{2}$); (c, d) with different durations and same fluence ($0.1~\text{mJ}/\text{cm}^{2}$) and (e,f) with different energy densities and same duration (100 fs).
    Variation of the maximum value of $N$ with increasing fluence. The fluence is increased by the two ways: path A (increasing intensity in the case of fixed pulse duration) and path B (increasing pulse duration in the case of fixed intensity).
    Time evolution of (a) $N$ and (b) $T_{l}$ in Ge irradiated by double pulses, where the interval between them is 100 fs, the duration of the first pulse is 50 fs and that of the second one is 50, 70 and 100 fs, respectively; time evolution of (c) $N$ and (d) $T_{l}$ in Ge irradiated by the double pulses, where the duration of them are both 50 fs, and the interval between them is 50, 100, 200 and 400 fs, respectively.
    • Table 1. Parameters of $G_{\text{e}}$ at temperature of 300 K[24].

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      Table 1. Parameters of $G_{\text{e}}$ at temperature of 300 K[24].

      ParameterValue
      Density ${\it\rho}$$5.32~\text{g}/\text{cm}^{3}$
      Lattice thermal conductivity $k_{l}$$0.6~\text{W}/(\text{cm}\cdot \text{K})$
      Lattice specific heat $\text{C}_{l}$$1.7~\text{J}/(\text{K}\cdot \text{cm}^{3})$
      Auger recombination rate ${\it\gamma}_{\text{}}$$2\times 10^{-31}~\text{cm}^{6}/\text{s}$
      Band gap $E_{g}$$0.664~\text{eV}$
      Electron effective mass ${\dot{m}}_{e}$$0.22~m_{0}$
      Hole effective mass ${\dot{m}}_{h}$$0.34~m_{0}$
      Electron mobility ${\it\mu}_{e}$$3800~\text{cm}^{3}/(\text{V}\cdot \text{s})$
      Hole mobility ${\it\mu}_{h}$$1800~\text{cm}^{3}/(\text{V}\cdot \text{s})$
      Electron diffusivity $D_{e}^{0}$$103~\text{cm}^{2}/\text{s}$
      Hole diffusivity $D_{h}^{0}$$54~\text{cm}^{2}/\text{s}$
      Absorption coefficient ${\it\alpha}$ (620 nm)$1.9\times 10^{5}~\text{cm}^{-1}$
      Reflectivity $R$ (620 nm)0.5
      Electron optical deformation $d_{e}^{0}$$6.4\times 10^{-4}~\text{erg/cm}$
      Hole optical deformation $d_{h}^{0}$$14.0\times 10^{-4}~\text{erg/cm}$
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    Fangjian Zhang, Shuchang Li, Anmin Chen, Yuanfei Jiang, Suyu Li, Mingxing Jin1. Ultrafast dynamical process of Ge irradiated by the femtosecond laser pulses[J]. High Power Laser Science and Engineering, 2016, 4(2): 02000e12

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    Paper Information

    Received: Oct. 7, 2015

    Accepted: Jan. 28, 2016

    Published Online: Nov. 1, 2016

    The Author Email:

    DOI:10.1017/hpl.2016.10

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