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Infrared and Laser Engineering, Volume. 45, Issue 5, 520002(2016)

Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment

Li Ping1,2,3, Li Tao1,2, Deng Shuangyan1,2, Li Xue1,2, Shao Xiumei1,2, Tang Hengjing1,2, and Gong Haimei1,2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    Li Ping, Li Tao, Deng Shuangyan, Li Xue, Shao Xiumei, Tang Hengjing, Gong Haimei. Dark current analysis of mesa type In0.83Ga0.17As p-i-n photodiodes with different annealing treatment[J]. Infrared and Laser Engineering, 2016, 45(5): 520002

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    Paper Information

    Category: 光电器件与微系统

    Received: Oct. 12, 2015

    Accepted: Dec. 2, 2015

    Published Online: Jun. 12, 2016

    The Author Email:

    DOI:10.3788/irla201645.0520002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology