Reduced threshold current density of GaN-based green laser diode by applying polarization doping <i>p</i>-cladding layer

Lingrong Jiang; Jianping Liu; Lei Hu; Liqun Zhang; Aiqin Tian; Wei Xiong; Xiaoyu Ren; Siyi Huang; Wei Zhou; Masao Ikeda; Hui Yang

doi:10.3788/COL202119.121404

Chinese Optics Letters, Volume. 19, Issue 12, 121404(2021)

Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

Lingrong Jiang^1,2,3, Jianping Liu^1,2,3、*, Lei Hu^1,2,3, Liqun Zhang^1,3, Aiqin Tian^1,3, Wei Xiong^1,3,4, Xiaoyu Ren^1,3, Siyi Huang^1,2,3, Wei Zhou^1,3, Masao Ikeda^1,3, and Hui Yang^1,2,3

Author Affiliations

¹Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

²School of Nano-tech and Nano-bionics, University of Science and Technology of China, Hefei 230026, China

³Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China

⁴Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China

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Lingrong Jiang, Jianping Liu, Lei Hu, Liqun Zhang, Aiqin Tian, Wei Xiong, Xiaoyu Ren, Siyi Huang, Wei Zhou, Masao Ikeda, Hui Yang. Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer[J]. Chinese Optics Letters, 2021, 19(12): 121404

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Paper Information

Category: Lasers, Optical Amplifiers, and Laser Optics

Received: Apr. 20, 2021

Accepted: Jun. 7, 2021

Published Online: Sep. 22, 2021

The Author Email: Jianping Liu (jpliu2010@sinano.ac.cn)

DOI:10.3788/COL202119.121404

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology