Journal of Semiconductors, Volume. 44, Issue 8, 080401(2023)
Improving the films quality of Sn-based perovskites through additive treatment for high-performance light-emitting diodes
Fig. 1. (Color online) Schematic illustration of the growth pathways of FA0.9Cs0.1SnI3 perovskites without additive or with PEAI–VmB1. (a) Without additive. This shows notable aggregation during the initial growth, resulting in many defects. (b) With PEAI and VmB1. This shows that the VmB1 ligands can effectively suppress aggregation, facilitating oriented growth with the assistance of PEAI in sequential growth[11].
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Ying Li, Guozhen Shen. Improving the films quality of Sn-based perovskites through additive treatment for high-performance light-emitting diodes[J]. Journal of Semiconductors, 2023, 44(8): 080401
Category: Articles
Received: Jun. 27, 2023
Accepted: --
Published Online: Sep. 21, 2023
The Author Email: Li Ying (gzshen@bit.edu.cn), Shen Guozhen (gzshen@bit.edu.cn)