Fig. 1. Real part of the effective dielectric constant of VO₂ at different temperature in THz region.

Fig. 2. The 3D configuration and the cross section view of the VO₂ (R)/SiO₂ PCs structure.

Fig. 3. (a) The dispersion relation of VO₂ (R)/SiO₂ PCs structure obtained with transfer matrix method. (b) The transmission spectrum of the structure obtained with numerical simulation.

Fig. 4. The influence of temperature on the dispersion relation of VO₂ (R)/SiO₂ PCs in the range of 0–125 THz.

Fig. 5. (a) The 3D configuration and cross section view of the VO₂ (R)/VO₂ (M)/SiO₂ PCs structure. (b) The dispersion curve obtained with transfer matrix method. (c) The transmission spectrum of VO₂ (R)/VO₂ (M)/SiO₂ PCs structure obtained with numerical calculation.

Fig. 6. (a) and (c) The influence of different proportions of VO₂ (R) and VO₂ (M), a₁/a₂, on the dispersion relation. (b) and (d) The position and band gap of the first band with different a₁/a₂.

Fig. 7. (a) and (b) The position and band gap of the second band with different a₁/a₂. (c) and (d) The position and band gap of the third band with different a₁/a₂.

Fig. 8. (a) The dispersion curve of 1D PCs with different number of layers. (b) The position and the first band width with different layers of VO₂.