Chinese Physics B, Volume. 29, Issue 8, (2020)
Ultra-low thermal conductivity of roughened silicon nanowires: Role of phonon-surface bond order imperfection scattering
Figures & Tables(7)
Fig. 1. Schematic illustration of surface roughness profile of SiNWs, where
Fig. 2. Thermal conductivity of smooth and roughened SiNWs at different temperature. The solid lines present our calculations. The symbols represent experimental measurements from Ref. [
Fig. 3. Phonon scattering rates in smooth SiNW (a) and roughened SiNW (b) as functions of phonon angular frequency.
Fig. 4. Contour plots of thermal conductivity as a function of
Fig. 5. (a) Power spectrum density of exponential surface and Gaussian surface. (b) Rough surface profiles generated from exponential and Gaussian ACFs.
Fig. 6. Thermal conductivity as a function of parameters (a) diameter, (b) rms of roughness, (c) correlation length of roughness, and (d) surface-to-volume ratio.
Table 1. Parameters in calculation of thermal conductivity of SiNWs.
View tableView in ArticleTable 1. Parameters in calculation of thermal conductivity of SiNWs.
Branch vs/(m/s) c/(10−7 m2/s) ωm/(Trad/s) Θ/K BU/(10−19 s/K) LA 9010 –2.0 77.5 592 0.908 TA 5230 –2.26 30.3 231 2.0
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Heng-Yu Yang, Ya-Li Chen, Wu-Xing Zhou, Guo-Feng Xie, Ning Xu. Ultra-low thermal conductivity of roughened silicon nanowires: Role of phonon-surface bond order imperfection scattering[J]. Chinese Physics B, 2020, 29(8):
Paper Information
Received: Mar. 31, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Xie Guo-Feng (nxu@ycit.c)
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