Nano-Micro Letters, Volume. 15, Issue 1, 202(2023)

High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage

Changlong Sun1... Xin Xu1, Cenlin Gui1, Fuzhou Chen1, Yian Wang2, Shengzhou Chen1, Minhua Shao2,* and Jiahai Wang1,** |Show fewer author(s)
Author Affiliations
  • 1School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, People’s Republic of China
  • 2Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon Hong Kong, People’s Republic of China
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    References(60)

    [37] [37] V.Y. Aristov, G. Urbanik, K. Kummer, D.V. Vyalikh, O.V. Molodtsova et al., Graphene synthesis on cubic sic/si wafers. perspectives for mass production of graphene-based electronic devices. Nano Lett. 10, 992 (2010).

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    Changlong Sun, Xin Xu, Cenlin Gui, Fuzhou Chen, Yian Wang, Shengzhou Chen, Minhua Shao, Jiahai Wang. High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage[J]. Nano-Micro Letters, 2023, 15(1): 202

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    Paper Information

    Category: Research Articles

    Received: Apr. 26, 2023

    Accepted: Jul. 21, 2023

    Published Online: Dec. 15, 2023

    The Author Email: Shao Minhua (kemshao@ust.hk), Wang Jiahai (jiahaiwang@gzhu.edu.cn)

    DOI:10.1007/s40820-023-01175-6

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