High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage

Changlong Sun; Xin Xu; Cenlin Gui; Fuzhou Chen; Yian Wang; Shengzhou Chen; Minhua Shao; Jiahai Wang

doi:10.1007/s40820-023-01175-6

Nano-Micro Letters, Volume. 15, Issue 1, 202(2023)

High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage

Changlong Sun1... Xin Xu1, Cenlin Gui1, Fuzhou Chen1, Yian Wang2, Shengzhou Chen1, Minhua Shao2,* and Jiahai Wang1,** |Show fewer author(s)

Author Affiliations

¹School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, People’s Republic of China

²Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon Hong Kong, People’s Republic of China

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References(60)

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Changlong Sun, Xin Xu, Cenlin Gui, Fuzhou Chen, Yian Wang, Shengzhou Chen, Minhua Shao, Jiahai Wang. High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage[J]. Nano-Micro Letters, 2023, 15(1): 202

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Paper Information

Category: Research Articles

Received: Apr. 26, 2023

Accepted: Jul. 21, 2023

Published Online: Dec. 15, 2023

The Author Email: Shao Minhua (kemshao@ust.hk), Wang Jiahai (jiahaiwang@gzhu.edu.cn)

DOI:10.1007/s40820-023-01175-6

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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