Infrared and Laser Engineering, Volume. 48, Issue 9, 919003(2019)

Measurement of minority carrier lifetime in silicon by high speed terahertz detector

Zhang Zhao... Chen Xieyu and Tian Zhen |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    Zhang Zhao, Chen Xieyu, Tian Zhen. Measurement of minority carrier lifetime in silicon by high speed terahertz detector[J]. Infrared and Laser Engineering, 2019, 48(9): 919003

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: May. 5, 2019

    Accepted: Jun. 3, 2019

    Published Online: Oct. 12, 2019

    The Author Email:

    DOI:10.3788/irla201948.0919003

    Topics