Journal of Semiconductors, Volume. 41, Issue 8, 082006(2020)

First-principle study of puckered arsenene MOSFET

Hengze Qu... Ziwei Lin, Ruijuan Guo, Xiyu Ming, Wenhan Zhou, Shiying Guo, Xiufeng Song, Shengli Zhang and Haibo Zeng |Show fewer author(s)
Author Affiliations
  • Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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    Figures & Tables(6)
    (Color online) (a) The top and side views of puckered arsenene. (b) The band structure at PBE (purple line) and HSE06 (orange line) level and the orbital-projected density of states of the puckered arsenene. (c) The partial charge density of CBM and VBM.
    (Color online) The band dispersions of the CBM along (a) the armchair direction and (b) the zigzag direction, and that of VBM along (c) the armchair direction and (d) the zigzag direction. The corresponding effective mass and carrier mobility are also marked out.
    (Color online) The schematic model of dual-gated puckered arsenene MOSFET along (a) the armchair and (c) zigzag direction. The transfer characteristics for puckered arsenene n- and p-MOSFETs along (b) the armchair and (d) zigzag direction with Lch = 3–10 nm.
    (Color online) The SS and the on/off ratio as a function of the Lch for the puckered arsenene assessed according to the IRDS requirements for HP applications.
    (Color online) The position resolved LDOS and spectral currents of puckered arsenene n-FETs with 5-nm Lch with the transport direction along (a) armchair and (b) zigzag direction as Vgs = –1 V. The position resolved LDOS and spectral current of 5-nm-Lch P-FETs along (c) the armchair and (d) zigzag directions as Vgs = 0.9 V.
    (Color online) Switching energy versus delay time, τ, for a 32-bit ALU based on puckered arsenene FETs in HP conditions.
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    Hengze Qu, Ziwei Lin, Ruijuan Guo, Xiyu Ming, Wenhan Zhou, Shiying Guo, Xiufeng Song, Shengli Zhang, Haibo Zeng. First-principle study of puckered arsenene MOSFET[J]. Journal of Semiconductors, 2020, 41(8): 082006

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    Paper Information

    Category: Articles

    Received: May. 31, 2020

    Accepted: --

    Published Online: Sep. 10, 2021

    The Author Email:

    DOI:10.1088/1674-4926/41/8/082006

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