Journal of Semiconductors, Volume. 41, Issue 8, 082006(2020)
First-principle study of puckered arsenene MOSFET
Fig. 1. (Color online) (a) The top and side views of puckered arsenene. (b) The band structure at PBE (purple line) and HSE06 (orange line) level and the orbital-projected density of states of the puckered arsenene. (c) The partial charge density of CBM and VBM.
Fig. 2. (Color online) The band dispersions of the CBM along (a) the armchair direction and (b) the zigzag direction, and that of VBM along (c) the armchair direction and (d) the zigzag direction. The corresponding effective mass and carrier mobility are also marked out.
Fig. 3. (Color online) The schematic model of dual-gated puckered arsenene MOSFET along (a) the armchair and (c) zigzag direction. The transfer characteristics for puckered arsenene n- and p-MOSFETs along (b) the armchair and (d) zigzag direction with
Fig. 4. (Color online) The SS and the on/off ratio as a function of the
Fig. 5. (Color online) The position resolved LDOS and spectral currents of puckered arsenene n-FETs with 5-nm
Fig. 6. (Color online) Switching energy versus delay time,
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Hengze Qu, Ziwei Lin, Ruijuan Guo, Xiyu Ming, Wenhan Zhou, Shiying Guo, Xiufeng Song, Shengli Zhang, Haibo Zeng. First-principle study of puckered arsenene MOSFET[J]. Journal of Semiconductors, 2020, 41(8): 082006
Category: Articles
Received: May. 31, 2020
Accepted: --
Published Online: Sep. 10, 2021
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