Optoelectronics Letters, Volume. 17, Issue 8, 454(2021)

Phonon transmission of vacancy disordered armchair silicene nanoribbon

Howlader Ashraful Hossain1,2,3、*, Islam Md. Sherajul2, and Ferdous Naim2,3
Author Affiliations
  • 1School of Physics, The University of Sydney, New South Wales 2006, Australia
  • 2Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology, Khulna 9203, Bangladesh
  • 3Department of Electrical and Electronic Engineering, Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj 8100, Bangladesh
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    This work demonstrates the atomic vacancy effects on the phonon properties of armchair silicene nanoribbon in a step by step process for the first time. The phonon localization effect figures out the fact that vacancies cause to high-energy phonons become localized, whereas low-energy phonons can easily transmit. The vacancy reduces high-energy phonon transmission severely compared to low-energy phonon. It is also found from phonon density of states that high-frequency phonons soften towards the low-frequency region. The simulated phonon bandstructure verifies that most of the phonon branches transform to a nondegenerate state from a degenerate state and shifted toward a lower frequency regime due to the presence of vacancies. The overall consequences of atomic vacancies on the phonon thermal conductance disclose the reality that only a few atomic vacancies result in a vital reduction of phonon thermal conductance. In addition, the entropy of the disordered system is investigated.

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    Ashraful Hossain Howlader, Md. Sherajul Islam, Naim Ferdous. Phonon transmission of vacancy disordered armchair silicene nanoribbon[J]. Optoelectronics Letters, 2021, 17(8): 454

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    Paper Information

    Received: Nov. 22, 2020

    Accepted: Dec. 23, 2020

    Published Online: Sep. 2, 2021

    The Author Email: Howlader Ashraful Hossain (ashraful.howlader@sydney.edu.au)

    DOI:10.1007/s11801-021-0187-2

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