Optoelectronics Letters, Volume. 17, Issue 8, 454(2021)
Phonon transmission of vacancy disordered armchair silicene nanoribbon
This work demonstrates the atomic vacancy effects on the phonon properties of armchair silicene nanoribbon in a step by step process for the first time. The phonon localization effect figures out the fact that vacancies cause to high-energy phonons become localized, whereas low-energy phonons can easily transmit. The vacancy reduces high-energy phonon transmission severely compared to low-energy phonon. It is also found from phonon density of states that high-frequency phonons soften towards the low-frequency region. The simulated phonon bandstructure verifies that most of the phonon branches transform to a nondegenerate state from a degenerate state and shifted toward a lower frequency regime due to the presence of vacancies. The overall consequences of atomic vacancies on the phonon thermal conductance disclose the reality that only a few atomic vacancies result in a vital reduction of phonon thermal conductance. In addition, the entropy of the disordered system is investigated.
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Ashraful Hossain Howlader, Md. Sherajul Islam, Naim Ferdous. Phonon transmission of vacancy disordered armchair silicene nanoribbon[J]. Optoelectronics Letters, 2021, 17(8): 454
Received: Nov. 22, 2020
Accepted: Dec. 23, 2020
Published Online: Sep. 2, 2021
The Author Email: Howlader Ashraful Hossain (ashraful.howlader@sydney.edu.au)