Acta Photonica Sinica, Volume. 34, Issue 5, 758(2005)

Design and Fabrication of Anti-reflection Coating for 1.55 μm Polarization-insensitive Semiconductor Optical Amplifiers

[in Chinese]1,2, [in Chinese]1, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(6)

    [1] [1] Diez S,Ludwig R,Weber H G.Gain-transparent SOA-switch for high-bitrate OTDM add/drop multiplexing.IEEE Photon Technol Lett,1999,11(1): 60 ~62

    [2] [2] Geraghty D F,Lee R B,Vahala K J,et al.Wavelength conversion up to 18 nm at 10 Gb/s by four-wave mixing in a semiconductor optical amplifier.IEEE Photon Technol Lett,1997,9(4):452~454

    [3] [3] Simoyama T,Kuwatsuka H,Little B E, et al.High-efficiency wavelength conversion using FWM in an SOA integrated DFB laser.IEEE Photon Technol Lett,2000,12(1):31~33

    [4] [4] Akiyama T,Kuwatsuka H,Simoyama T, et al.Design optimisation of SOA-integrated DFB laser wavelength converter.Electron Lett,2002,38(5):239~241

    [5] [5] Gallant D J,Tilton M L,Bossert D J, et al.Optimized single-layer antireflection coating for semiconductor laser.IEEE Photon Technol Lett,1997,9(3):300~302

    [6] [6] Lee J,Kamiya T.Improved characterization of multilayer antireflection coatings for broad-band semiconductor optical amplifiers.IEEE J Lightwave Technol,2000,18(12):2158 ~2166

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Design and Fabrication of Anti-reflection Coating for 1.55 μm Polarization-insensitive Semiconductor Optical Amplifiers[J]. Acta Photonica Sinica, 2005, 34(5): 758

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    Paper Information

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    Received: Apr. 16, 2004

    Accepted: --

    Published Online: Jun. 12, 2006

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