Infrared and Laser Engineering, Volume. 50, Issue 5, 20200306(2021)
Channel size-dependent TED effect in MOSFETs with infrared rapid thermal anneal
Fig. 1. Comparison diagram of
Fig. 2. Schematic diagram of
Fig. 3. Schematic diagram of MOSFETs structure and process
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9. TCAD simulation result
Fig. 10. Schematic diagram of boron ion concentration distribution in devices with TED
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Mengyuan Ren, Fei Chen. Channel size-dependent TED effect in MOSFETs with infrared rapid thermal anneal[J]. Infrared and Laser Engineering, 2021, 50(5): 20200306
Category: Optical devices
Received: Dec. 10, 2020
Accepted: --
Published Online: Aug. 13, 2021
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