Infrared and Laser Engineering, Volume. 50, Issue 5, 20200306(2021)

Channel size-dependent TED effect in MOSFETs with infrared rapid thermal anneal

Mengyuan Ren and Fei Chen
Author Affiliations
  • School of Microelectronics, Tianjin University, Tianjin 300072, China
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    Figures & Tables(10)
    Comparison diagram ofVt-L curve of NMOS and PMOS transistor
    Schematic diagram of Vt measurement method
    Schematic diagram of MOSFETs structure and process
    Vt-L curves of Vt adjustment ion-implantation experiments
    Vt-L curves of LDD ion-implantation experiments
    Vt-L curves of LDD carbon ion co-implantation experiments
    Vt curves with different channel sizes
    Vt curves with different annealing process
    TCAD simulation result
    Schematic diagram of boron ion concentration distribution in devices with TED
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    Mengyuan Ren, Fei Chen. Channel size-dependent TED effect in MOSFETs with infrared rapid thermal anneal[J]. Infrared and Laser Engineering, 2021, 50(5): 20200306

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    Paper Information

    Category: Optical devices

    Received: Dec. 10, 2020

    Accepted: --

    Published Online: Aug. 13, 2021

    The Author Email:

    DOI:10.3788/IRLA20200306

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