Semiconductor Optoelectronics, Volume. 44, Issue 4, 653(2024)

Low-Temperature Stability of Preamplifier Circuits for HgCdTe Infrared Detectors

HAN Junli1...2, LIU Fuhao2, YANG Xiaoyang2, MA Ding2, YU Shuangyang1,2 and LI Xiangyang2 |Show fewer author(s)
Author Affiliations
  • 1School of Microelectronics, Shanghai University, Shanghai 200444, CHN
  • 2Shanghai Institute of Technology Physics, Chinese Academy of Sciences, Shanghai 200083, CHN
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    References(3)

    [7] [7] Xin C, Yong C, Dong L W, et al. Status and progress of research on HgCdTe photovoltaic infrared detectors[C]// Proc. of the 7th International Symposium of Space Optical Instruments and Applications, 2022: 191-206.

    [9] [9] Eppeldauer G P, Martin R J. Photocurrent measurement of PC and PV HgCdTe detectors[J]. J. Res. Natl. Inst. Stand. Technol., 2001, 106(3): 577-587.

    [10] [10] Wang F, Ji X, Guo A, et al. Design and implementation of multi-channel readout circuits for low-temperature environments[J]. Electronics, 2023, 12(9): 2089.

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    HAN Junli, LIU Fuhao, YANG Xiaoyang, MA Ding, YU Shuangyang, LI Xiangyang. Low-Temperature Stability of Preamplifier Circuits for HgCdTe Infrared Detectors[J]. Semiconductor Optoelectronics, 2024, 44(4): 653

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    Paper Information

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    Received: Feb. 2, 2024

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024020201

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