[1] W Nunn, T K Truttmann, B Jalan. A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors. J Mater Res, 36, 4846(2021).

[2] Z Zuo, Z G Xu, R J Zheng et al. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy. Sci Rep, 5, 14760(2015).

[3] C Zhao, T K Ng, N N Wei et al. Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters. Nano Lett, 16, 1056(2016).

[4] D Priante, B Janjua, A Prabaswara et al. Highly uniform ultraviolet-a quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer. Opt Mater Express, 7, 4214(2017).

[5] C Zhao, Y H Chen, B Xu et al. Evolution of InAs nanostructures grown by droplet epitaxy. Appl Phys Lett, 91, 033112(2007).

[6] A T Bollinger, J Wu, I Božović. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy. APL Mater, 4, 053205(2016).

[7] H S Kim, J Jeong, G H Kwon et al. Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy. Appl Surf Sci, 585, 152507(2022).

[8] Y F Ma, S C Zhang, Z F Peng et al. Investigation on 1065 nm laser performance with Nd: GdLaNbO4 mixed crystal and molybdenum disulfide. Opt Laser Technol, 120, 105715(2019).

[9] L E Bourree, D R Chasse, P L Stephan Thamban et al. Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVDSPIE Proceedings. Low-Light-Level and Real-Time Imaging Systems, Components, and Applications(2003).

[10] F Schubert, S Zybell, J Heitmann et al. Influence of the substrate grade on structural and optical properties of GaN/AlGaN superlattices. J Cryst Growth, 425, 145(2015).

[11] M Opel. Spintronic oxides grown by laser-MBE. J Phys D: Appl Phys, 45, 033001(2012).

[12] K Kosiel. MBE—Technology for nanoelectronics. Vacuum, 82, 951(2008).

[13] K Zekentes, V Papaioannou, B Pecz et al. Early stages of growth of β-SiC on Si by MBE. J Cryst Growth, 157, 392(1995).

[14] N A Güsken, T Rieger, P Zellekens et al. MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures. Nanoscale, 9, 16735(2017).

[15] H Iha, Y Hirota, M Yamauchi et al. Effect of arsenic cracking on in incorporation into MBE-grown InGaAs layer. Phys Status Solidi C, 12, 524(2015).

[16] K J Zhu, Y H Bai, X Y Hong et al. Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4 with in situ angle-resolved photoemission spectroscopy. J Phys: Condens Matter, 32, 475002(2020).

[17] J Q Fan, S Z Wang, X Q Yu et al. Molecular beam epitaxy growth and surface structure of Sr1–xNdxCuO2 cuprate films. Phys Rev B, 101, 180508(2020).

[18] D V Marin, V A Shvets, I A Azarov et al. Ellipsometric thermometry in molecular beam epitaxy of mercury cadmium telluride. Infrared Phys Technol, 116, 103793(2021).

[19] M Hilse, X Y Wang, P Killea et al. Spectroscopic ellipsometry as an in situ monitoring tool for Bi2Se3 films grown by molecular beam epitaxy. J Cryst Growth, 566/567, 126177(2021).

[20] A Botchkarev, A Salvador, B Sverdlov et al. Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy. J Appl Phys, 77, 4455(1995).

[21] H S Peng, Q W Li, T Chen. Preface. Industrial applications of carbon nanotubes. Amsterdam: Elsevier(2017).

[22] S Y Karpov, R A Talalaev, Y N Makarov et al. Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy. Surf Sci, 450, 191(2000).

[23] K Mudiyanselage, K Katsiev, H Idriss. Effects of experimental parameters on the growth of GaN nanowires on Ti-film/Si(1 0 0) and Ti-foil by molecular beam epitaxy. J Cryst Growth, 547, 125818(2020).

[24] Y W Jung, T J Kim, Y D Kim et al. Temperature dependence of the dielectric response of AlSb. AIP Conference Proceedings, 37(2011).

[25] M Albert, C Golla, C Meier. Optical in situ temperature management for high-quality ZnO molecular beam epitaxy. J Cryst Growth, 557, 126009(2021).

[26] M Fortin-Deschênes, O Waller, T O Menteş et al. Synthesis of antimonene on germanium. Nano Lett, 17, 4970(2017).

[27] W Zhang, H Enriquez, A J Mayne et al. First steps of blue phosphorene growth on Au(1 1 1). Mater Today, 39, 1153(2021).

[28] W Wang, Q A Zhou, Y A Dong et al. Critical thickness for strain relaxation of Ge1–xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001). Appl Phys Lett, 106, 232106(2015).

[29] Y Kong, C J Bennett, C J Hyde. A review of non-destructive testing techniques for the in situ investigation of fretting fatigue cracks. Mater Des, 196, 109093(2020).

[30] H J Lin, H W Li, H Y Shao et al. In situ measurement technologies on solid-state hydrogen storage materials: A review. Mater Today Energy, 17, 100463(2020).

[31] D M Zhernokletov, H Dong, B Brennan et al. Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb(100). J Vac Sci Technol A, 31, 060602(2013).

[32] P Laukkanen, M P J Punkkinen, J J K Lång et al. Bismuth-containing c(4 × 4) surface structure of the GaAs(1 0 0) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations. J Electron Spectrosc Relat Phenom, 193, 34(2014).

[33] W Zhang, P K J Wong, S Jiang et al. Integrating spin-based technologies with atomically controlled van der Waals interfaces. Mater Today, 51, 350(2021).

[34] A A Lazarenko, T N Berezovskaya, D V Denisov et al. Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy. J Phys, 917, 32003(2017).

[35] V Kladko, A Kuchuk, P Lytvyn et al. Substrate effects on the strain relaxation in GaN/AlN short-period superlattices. Nanoscale Res Lett, 7, 289(2012).

[36] T Zhang, N Levy, J Ha et al. Scanning tunneling microscopy of gate tunable topological insulator Bi2Se3 thin films. Phys Rev B, 87, 115410(2013).

[37] A F Bai, M Hilse, P D Patil et al. Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in situ spectroscopic ellipsometry. J Cryst Growth, 591, 126714(2022).

[38] W Z Lin, A Foley, K Alam et al. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy. Rev Sci Instrum, 85, 043702(2014).

[39] J Huidobro, J Aramendia, G Arana et al. Reviewing in situ analytical techniques used to research Martian geochemistry: From the Viking project to the MMX future mission. Anal Chim Acta, 1197, 339499(2022).

[40] D M Lin, K K Li, L M Zhou. Advanced in situ characterizations of nanocomposite electrodes for sodium-ion batteries-A short review. Compos Commun, 25, 100635(2021).

[41] R O'Hegarty, O Kinnane, D Lennon et al. In-situ U-value monitoring of highly insulated building envelopes: Review and experimental investigation. Energy Build, 252, 111447(2021).

[42] R P Socha, M Szczepanik-Ciba, W Powroźnik et al. Epitaxial α-Mn(001) films on MgO(001). Thin Solid Films, 556, 137(2014).

[43] R Yang, T Krzyzewski, T Jones. The study of in situ scanning tunnelling microscope characterization on GaN thin film grown by plasma assisted molecular beam epitaxy. Appl Phys Lett, 102, 112104(2013).

[44] J K Kawasaki, B D Schultz, H Lu et al. Surface-mediated tunable self-assembly of single crystal semimetallic ErSb/GaSb nanocomposite structures. Nano Lett, 13, 2895(2013).

[45] I Hernández-Rodríguez, J M García, J A Martín-Gago et al. Graphene growth on Pt(111) and Au(111) using a MBE carbon solid-source. Diam Relat Mater, 57, 58(2015).

[46] M Haze, Y Torii, R Peters et al. In situ STM observation of nonmagnetic impurity effect in MBE-grown CeCoIn5 films. J Phys Soc Jpn, 87, 034702(2018).

[47] X Q Cai, Z L Xu, H Zhou et al. Epitaxial growth and band structure of antiferromagnetic Mott insulator CeOI. Phys Rev Materials, 4, 064003(2020).

[48] M E Dávila, L Xian, S Cahangirov et al. Germanene: A novel two-dimensional germanium allotrope akin to graphene and silicene. New J Phys, 16, 095002(2014).

[49] P Allongue, F Maroun. Electrodeposited magnetic layers in the ultrathin limit. MRS Bull, 35, 761(2010).

[50] Z B Wu, D Putzky, A K Kundu et al. Homogeneous superconducting gap in DyBa2Cu3O7–δ synthesized by oxide molecular beam epitaxy. Phys Rev Materials, 4, 124801(2020).

[51] C L Song, Y L Wang, Y P Jiang et al. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy. Appl Phys Lett, 97, 143118(2010).

[52] T Toujyou, S Tsukamoto. Temperature-dependent site control of InAs/GaAs (001) quantum dots using a scanning tunneling microscopy tip during growth. Nanoscale Res Lett, 5, 1930(2010).

[53] T Toujyou, S Tsukamoto. in situ STM observation during InAs growth in nano holes at 300 °C. Surf Sci, 605, 1320(2011).

[54] B Rauschenbach, A Lotnyk, L Neumann et al. Ion beam assisted deposition of thin epitaxial GaN films. Materials, 10, 690(2017).

[55] T Nishinaga. Handbook of crystal growth(2015).

[56] M Kolíbal, T Pejchal, T Musálek et al. Catalyst–substrate interaction and growth delay in vapor–liquid–solid nanowire growth. Nanotechnology, 29, 205603(2018).

[57] K Wang, T Yamaguchi, T Araki et al. In situ investigation of growth mechanism during molecular beam epitaxy of In-polar InN. Jpn J Appl Phys, 50, 01AE02(2011).

[58] J Kim, B Y Hou, C Park et al. Effect of defects on reaction of NiO surface with Pb-contained solution. Sci Rep, 7, 44805(2017).

[59] H B Deng, Y A Li, Z L Feng et al. Moiré superlattice modulations in single-unit-cell FeTe films grown on NbSe2 single crystals. Chin Phys B, 30, 126801(2021).

[60] P Sutter, E Sutter. Growth mechanisms of anisotropic layered group IV chalcogenides on van der waals substrates for energy conversion applications. ACS Appl Nano Mater, 1, 3026(2018).

[61] M Fortin-Deschênes, O Moutanabbir. Recovering the semiconductor properties of the epitaxial group V 2D materials antimonene and arsenene. J Phys Chem C, 122, 9162(2018).

[62] S Kanjanachuchai, T Wongpinij, S Kijamnajsuk et al. Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations. J Appl Phys, 123, 161570(2018).

[63] A Mandziak, G D Soria, J E Prieto et al. Different spin axis orientation and large antiferromagnetic domains in Fe-doped NiO/Ru(0001) epitaxial films. Nanoscale, 12, 21225(2020).

[64] B Croes, F Cheynis, P Müller et al. Polar surface of ferroelectric nanodomains in GeTe thin films. Phys Rev Materials, 6, 064407(2022).

[65] A Bag, S Das, D Biswas. Observation of in-situ reciprocal lattice evolution of AlGaN/InGaN on Si (111) through GaN and AlN interlayers by RHEED and reflectance. Phys Status Solidi C, 13, 186(2016).

[66] W Guo, D X Ji, Z S Yuan et al. Epitaxial growth of bronze phase titanium dioxide by molecular beam epitaxy. AIP Adv, 9, 035230(2019).

[67] H Zhou, X X Liao, S M Ke. Effects of strain on ultrahigh-performance optoelectronics and growth behavior of high-quality indium tin oxide films on yttria-stabilized zirconia (001) substrates. J Mater Sci, 32, 21462(2021).

[68] K Ghosh, P Busi, S Das et al. Excimer laser annealing: An alternative route and its optimisation to effectively activate Si dopants in AlN films grown by plasma assisted molecular beam epitaxy. Mater Res Bull, 97, 300(2018).

[69] J Zhu, J Jing, W B Luo et al. Epitaxial growth of (100)-oriented ceria film on c-plane GaN/Al2O3 using YSZ/TiO2 buffer layers by pulse laser molecular beam epitaxy. J Vac Sci Technol B, 29, 032202(2011).

[70] B Strawbridge, N Cernetic, J Chapley et al. Influence of surface topography on in situ reflection electron energy loss spectroscopy plasmon spectra of AlN, GaN, and InN semiconductors. J Vac Sci Technol A, 29, 041602(2011).

[71] A Alanís, H Vilchis, E López et al. Cubic GaN films grown below the congruent sublimation temperature of (0 0 1) GaAs substrates by plasma-assisted molecular beam epitaxy. J Vac Sci Technol B, 34, 02L115(2016).

[72] J Pak, W Lin, K Wang et al. Growth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride. J Vac Sci Technol A, 28, 536(2010).

[73] Y P Li, H Q Wang, H Zhou et al. Tuning the surface morphologies and properties of ZnO films by the design of interfacial layer. Nanoscale Res Lett, 12, 551(2017).

[74] Q Li, M J Ying, M D Zhang et al. Structural characterization and surface polarity determination of polar ZnO films prepared by MBE. Appl Nanosci, 13, 3197(2023).

[75] M T Dau, M Petit, A Watanabe et al. Growth of germanium nanowires on silicon(111) substrates by molecular beam epitaxy. J Nanosci Nanotech, 11, 9292(2011).

[76] F F Ge, X M Wang, Y N Li et al. Controllable growth of nanocomposite films with metal nanocrystals sandwiched between dielectric superlattices. J Nanopart Res, 13, 6447(2011).

[77] C Mietze, E A Jr DeCuir, M O Manasreh et al. Inter- and intrasubband spectroscopy of cubic AlN/GaN superlattices grown by molecular beam epitaxy on 3C-SiC. Phys Status Solidi (c), 7, 64(2010).

[78] Z Yang, C Ke, L L Sun et al. Growth and structure investigation of multiferroic superlattices: [(La0.8Sr0.2MnO3)4n/(BaTiO3)3n]M. Solid State Commun, 150, 1432(2010).

[79] J Kwoen, Y Arakawa. Classification of reflection high-energy electron diffraction pattern using machine learning. Cryst Growth Des, 20, 5289(2020).

[80] R C Haislmaier, G Stone, N Alem et al. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy. Appl Phys Lett, 109, 043102(2016).

[81] A McClure, P Rugheimer, Y U Idzerda. Magnetic and structural properties of single crystal Fe1–xZnx thin films. J Appl Phys, 109, 07A932(2011).

[82] N Halder, J Suseendran, S Chakrabarti et al. Effect of InAlGaAs and GaAs combination barrier thickness on the duration of dot formation in different layers of stacked InAs/GaAs quantum dot heterostructure grown by MBE. J Nanosci Nanotech, 10, 5202(2010).

[83] J E Zhao, Y P Zeng, C Liu et al. Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy. J Cryst Growth, 312, 1491(2010).

[84] Y Ma, A Edgeton, H Paik et al. Realization of epitaxial thin films of the topological crystalline insulator Sr3SnO. Advanced Materials, 32, 2000809(2020).

[85] J Encomendero, S M Islam, D Jena et al. Molecular beam epitaxy of polar III-nitride resonant tunneling diodes. J Vac Sci Technol A, 39, 023409(2021).

[86] T Dursap, M Vettori, C Botella et al. Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy. Nanotechnology, 32, 155602(2021).

[87] M Debiossac, P Atkinson, A Zugarramurdi et al. Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination. Appl Surf Sci, 391, 53(2017).

[88] P Schöffmann, S Pütter, J Schubert et al. Tuning the Co/Sr stoichiometry of SrCoO2.5 thin films by RHEED assisted MBEgrowth. Mater Res Express, 7, 116404(2020).

[89] D V Nechaev, A A Sitnikova, P N Brunkov et al. Stress generation and relaxation in (Al, Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy. Tech Phys Lett, 43, 443(2017).

[90] D Zolotukhin, D Nechaev, N Kuznetsova et al. Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE. J Phys:Conf Ser, 741, 012025(2016).

[91] P Vogt, O Bierwagen. The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy. Appl Phys Lett, 106, 081910(2015).

[92] J Jakob, P Schroth, L Feigl et al. Correlating in situ RHEED and XRD to study growth dynamics of polytypism in nanowires. Nanoscale, 13, 13095(2021).

[93] S Sen, S Paul, C Singha et al. Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED. J Vac Sci Technol B, 38, 014007(2020).

[94] B J May, J J Kim, P Walker et al. Molecular beam epitaxy of GaAs templates on water soluble NaCl thin films. J Cryst Growth, 586, 126617(2022).

[95] C Keenan, S Chandril, T H Myers et al. In-situ stoichiometry determination using X-ray fluorescence generated by reflection-high-energy-electron-diffraction. J Appl Phys, 109, 114305(2011).

[96] S R Provence, S Thapa, R Paudel et al. Machine learning analysis of perovskite oxides grown by molecular beam epitaxy. Phys Rev Materials, 4, 083807(2020).

[97] J Kwoen, Y Arakawa. Classification of in situ reflection high energy electron diffraction images by principal component analysis. Jpn J Appl Phys, 60, SBBK03(2021).

[98] I Yanilkin, W Mohammed, A Gumarov et al. Synthesis, characterization, and magnetoresistive properties of the epitaxial Pd0.96Fe0.04/VN/Pd0.92Fe0.08 superconducting spin-valve heterostructure. Nanomaterials, 11, 64(2020).

[99] M. A Carpenter, S Mathur, A Kolmakov. Metal oxide nanomaterials for chemical sensors. Springer(2013).

[100] O Kuschel, W Spiess, T Schemme et al. Real-time monitoring of the structure of ultrathin Fe3O4 films during growth on Nb-doped SrTiO3(001). Appl Phys Lett, 111, 041902(2017).

[101] A Esmaeili, I V Yanilkin, A I Gumarov et al. Epitaxial growth of Pd1−xFex films on MgO single-crystal substrate. Thin Solid Films, 669, 338(2019).

[102] L Zhang, D X Shi, S X Du et al. Structural transition and thermal stability of a coronene molecular monolayer on Cu(110). J Phys Chem C, 114, 11180(2010).

[103] K Ruwisch, T Pohlmann, M Hoppe et al. Inferface magnetization phenomena in epitaxial thin Fe3O4/CoxFe3–xO4 bilayers. J Phys Chem C, 125, 23327(2021).

[104] C Navío, M Villanueva, E Céspedes et al. Ultrathin films of L1-MnAl on GaAs (001): A hard magnetic MnAl layer onto a soft Mn-Ga-As-Al interface. APL Mater, 6, 101109(2018).

[105] D S Dhungana, C Grazianetti, C Martella et al. Two-dimensional silicene–stanene heterostructures by epitaxy. Adv Funct Materials, 31, 2102797(2021).

[106] M A Hafez, M K Zayed, H E Elsayed-Ali. Review: Geometric interpretation of reflection and transmission RHEED patterns. Micron, 159, 103286(2022).

[107] M Debiossac, P Roncin. Image processing for grazing incidence fast atom diffraction. Nucl Instrum Meth Phys Res Sect B, 382, 36(2016).

[108] M Debiossac, A Zugarramurdi, H Khemliche et al. Combined experimental and theoretical study of fast atom diffraction on the β2(2 × 4) reconstructed GaAs(001) surface. Phys Rev B, 90, 155308(2014).

[109] D G Merkel, D Bessas, Z Zolnai et al. Evolution of magnetism on a curved nano-surface. Nanoscale, 7, 12878(2015).

[110] Y V Knyazev, A I Chumakov, A Dubrovskiy et al. Nuclear forward scattering application to the spiral magnetic structure study in ε–Fe2O3. Phys Rev B, 101, 094408(2020).

[111] C Strohm, P Van der Linden, R Rüffer. Nuclear forward scattering of synchrotron radiation in pulsed high magnetic fields. Phys Rev Lett, 104, 087601(2010).

[112] R J Gu, C A Shen, Y Y Guo et al. in situ thickness and temperature measurements of CdTe grown by molecular beam epitaxy on GaAs substrate. J Vac Sci Technol B, 30, 041203(2012).

[113] K Fleischer, R Verre, O Mauit et al. Reflectance anisotropy spectroscopy of magnetite (110) surfaces. Phys Rev B, 89, 195118(2014).

[114] J Ortega-Gallegos, L E Guevara-Macías, A Lastras-Martínez et al. Rapid reflectance-anisotropy spectroscopy as an optical probe for real-time monitoring of thin film deposition. AIP Conference Proceedings, 1934, 040001(2018).

[115] J Ortega-Gallegos, L E Guevara-Macías, A D Ariza-Flores et al. On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy. Appl Surf Sci, 439, 963(2018).

[116] V Cantelli, O Geaymond, O Ulrich et al. Thein situ growth of nanostructures on surfaces (INS) endstation of the ESRF BM32 beamline: Acombined UHV–CVD and MBE reactor forin situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires. J Synchrotron Radiat, 22, 688(2015).

[117] Y Li, F Wrobel, X Yan et al. Interface creation on a mixed-terminated perovskite surface. Appl Phys Lett, 118, 061601(2021).

[118] S Kowarik. Thin film growth studies using time-resolved X-ray scattering. J Phys:Condens Matter, 29, 043003(2017).

[119] T K Andersen, S Cook, G Wan et al. Layer-by-layer epitaxial growth of defect-engineered strontium cobaltites. ACS Appl Mater Interfaces, 10, 5949(2018).

[120] Y Li, F Wrobel, Y J Cheng et al. Self-healing growth of LaNiO3 on a mixed-terminated perovskite surface. ACS Appl Mater Interfaces, 14, 16928(2022).

[121] N Kakuda, T Kaizu, M Takahasi et al. Time-resolved X-ray diffraction measurements of high-density InAs quantum dots on Sb/GaAs layers and the suppression of coalescence by Sb-irradiated growth interruption. Jpn J Appl Phys, 49, 095602(2010).

[122] M Takahasi. X-ray diffraction study of crystal growth dynamics during molecular-beam epitaxy of III–V semiconductors. J Phys Soc Jpn, 82, 021011(2013).

[123] X Yan, F Wrobel, Y Li et al. in situ X-ray and electron scattering studies of oxide molecular beam epitaxial growth. APL Mater, 8, 101107(2020).

[124] J H Lee, I C Tung, S H Chang et al. in situ surface/interface X-ray diffractometer for oxide molecular beam epitaxy. Rev Sci Instrum, 87, 013901(2016).

[125] H Hong, J L McChesney, F Wrobel et al. in situ study on the evolution of atomic and electronic structure of LaTiO3/SrTiO3 system. Phys Rev Materials, 6, L011401(2022).

[126] J Chakraborty, T P Harzer, M J Duarte et al. Phase decomposition in nanocrystalline Cr0.8Cu0.2 thin films. J Alloys Compd, 888, 161391(2021).

[127] N Q Diep, S K Wu, C W Liu et al. Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery. Sci Rep, 11, 19887(2021).

[128] T Sasaki, M Takahasi. Influence of indium supply on Au-catalyzed InGaAs nanowire growth studied by in situ X-ray diffraction. J Cryst Growth, 468, 135(2017).

[129] M Takahasi. Quantitative monitoring of InAs quantum dot growth using X-ray diffraction. J Cryst Growth, 401, 372(2014).

[130] S M Mostafavi Kashani, D Kriegner, D Bahrami et al. X-ray diffraction analysis of the angular stability of self-catalyzed GaAs nanowires for future applications in solar-light-harvesting and light-emitting devices. ACS Appl Nano Mater, 2, 689(2019).

[131] T Sasaki, H Suzuki, A Sai et al. Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy. J Cryst Growth, 323, 13(2011).

[132] T Sasaki, M Takahasi, H Suzuki et al. in situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE. J Cryst Growth, 425, 13(2015).

[133] T Sasaki, M Takahasi. Real-time structural analysis of InGaAs/InAs/GaAs(1 1 1)A interfaces by in situ synchrotron X-ray reciprocal space mapping. J Cryst Growth, 512, 33(2019).

[134] S Ibrahimkutty, A Seiler, T Prüßmann et al. A portable ultrahigh-vacuum system for advanced synchrotron radiation studies of thin films and nanostructures: EuSi2nano-islands. J Synchrotron Radiat, 22, 91(2015).

[135] C X Wang, X G Zhu, L Nilsson et al. in situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness. Nano Res, 6, 688(2013).

[136] T Hutchins, M Nazari, M Eridisoorya et al. Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber. Rev Sci Instrum, 86, 014904(2015).

[137] Y R Fang, Z L Zhang, M T Sun. High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope. Rev Sci Instrum, 87, 033104(2016).

[138] Y W Jung, J S Byun, S Y Hwang et al. Dielectric response of AlP by in-situ ellipsometry. Thin Solid Films, 519, 8027(2011).

[139] B Johs, P He. Substrate wobble compensation for in situ spectroscopic ellipsometry measurements. J Vac Sci Technol B, 29, 03C111(2011).

[140] Z T Mi, L Z Wang, C Jagadish. Preface. Semiconductors and semimetals. Elsevier(2017).

[141] A V Voitsekhovskii, S N Nesmelov, S M Dzyadukh et al. Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation. Vacuum, 158, 136(2018).

[142] N Mikhailov, V Shvets, D Ikusov et al. Interface studies in HgTe/HgCdTe quantum wells. Phys Status Solidi B, 257, 1900598(2020).

[143] V A Shvets, N N Mikhailov, D G Ikusov et al. Determining the compositional profile of HgTe/CdxHg1–xTe quantum wells by single-wavelength ellipsometry. Opt Spectrosc, 127, 340(2019).

[144] M Tsukada, K Kobayashi, N Isshiki et al. First-principles theory of scanning tunneling microscopy. Surf Sci Rep, 13, 267(1991).

[145] H Koinuma, S Gonda, J P Gong et al. Surface and interface characterization of high Tc related epitaxial films by STM/STS and XPS. J Phys Chem Solids, 54, 1215(1993).

[146] J X Dai, W B Wang, M Brahlek et al. Restoring pristine Bi2Se3 surfaces with an effective Se decapping process. Nano Res, 8, 1222(2015).

[147] L Zhang, T Yang, M F Sahdan et al. Precise layer-dependent electronic structure of MBE-grown PtSe2. Adv Elect Materials, 7, 2100559(2021).

[148] H Y Xue, H Yang, Y F Wu et al. Molecular beam epitaxy of superconducting PdTe2 films on topological insulator Bi2Te3. Sci China Phys Mech Astron, 62, 76801(2019).

[149] J H Batey. The physics and technology of quadrupole mass spectrometers. Vacuum, 101, 410(2014).

[150] M Sobanska, Z R Zytkiewicz, G Calabrese et al. Comprehensive analysis of the self-assembled formation of GaN nanowires on amorphous AlxOy: in situ quadrupole mass spectrometry studies. Nanotechnology, 30, 154002(2019).

[151] M Wölz, S Fernández-Garrido, C Hauswald et al. Indium incorporation in InxGa1–xN/GaN nanowire heterostructures investigated by line-of-sight quadrupole mass spectrometry. Cryst Growth Des, 12, 5686(2012).

[152] F Katmis, R Calarco, K Perumal et al. Insight into the growth and control of single-crystal layers of Ge–Sb–Te phase-change material. Cryst Growth Des, 11, 4606(2011).

[153] T Auzelle, G Calabrese, S Fernández-Garrido. Tuning the orientation of the top-facets of GaN nanowires in molecular beam epitaxy by thermal decomposition. Phys Rev Materials, 3, 013402(2019).

[154] J McCoy, C T Lu, R Kaspi. in situ monitoring of GaSb1–xBix growth using desorption mass spectrometry. J Vac Sci Technol B, 38, 022210(2020).

[155] R Kaspi, C T Lu, C Yang et al. Desorption mass spectrometry: Revisiting the in situ calibration technique for mixed group-V alloy MBE growth of ~3.3 µm diode lasers. J Cryst Growth, 425, 5(2015).

[156] Q N Thong, D M Martin, P Agham et al. Growth of crystalline LaAlO3 by atomic layer deposition. Proceedings Volume 8987, Oxide-based Materials and Devices V, 8987, 898712(2014).

[157] Y H Lin, K Y Lin, W J Hsueh et al. Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition. J Cryst Growth, 477, 164(2017).

[158] P Maiti, P Guha, H Hussain et al. Microscopy and spectroscopy study of nanostructural phase transformation from β-MoO3 to Mo under UHV - MBE conditions. Surf Sci, 682, 64(2019).

[159] G G Wu, W T Zheng, F B Gao et al. Near infrared electroluminescence of ZnMgO/InN core-shell nanorod heterostructures grown on Si substrate. Phys Chem Chem Phys, 18, 20812(2016).

[160] G Meng, H P Ying, X M Wang et al. Epitaxial growth and determination of the band alignment for NixMg1-xO/MgO interface by laser molecular beam epitaxy. J Alloys Compd, 822, 153618(2020).

[161] C Han, D Xiang, M R Zheng et al. Tuning the electronic properties of ZnO nanowire field effect transistors via surface functionalization. Nanotechnology, 26, 095202(2015).

[162] X M Wang, D W Yan, C L Shen et al. Cu2O/MgO band alignment and Cu2O-Au nanocomposites with enhanced optical absorption. Opt Mater Express, 3, 1974(2013).

[163] H Seo, M Choi, A B Posadas et al. Combined in-situ photoemission spectroscopy and density functional theory of the Sr Zintl template for oxide heteroepitaxy on Si(001). J Vac Sci Technol B, 31, 04D107(2013).

[164] G Koster, G Rijnders. In situ characterization of thin film growth. Woodhead Publishing Limited(2011).

[165] S Chatterjee, S H Sung, D J Baek et al. Epitaxial growth and electronic properties of mixed valence YbAl3 thin films. J Appl Phys, 120, 035105(2016).

[166] M Kanagaraj, Y Z Sun, J A Ning et al. Topological quantum weak antilocalization limit and anomalous Hall effect in semimagnetic Bi2–xCrxSe3/Bi2Se3–yTey heterostructure. Mater Res Express, 7, 016401(2020).

[167] Y C Yang, Z T Liu, J S Liu et al. High-resolution ARPES endstation for in situ electronic structure investigations at SSRF. Nucl Sci Tech, 32, 31(2021).

[168] S Chatterjee, J P Ruf, H I Wei et al. Lifshitz transition from valence fluctuations in YbAl3. Nat Commun, 8, 852(2017).

[169] Y Gong, K J Zhu, Z Li et al. Experimental evidence of the thickness- and electric-field-dependent topological phase transitions in topological crystalline insulator SnTe(111) thin films. Nano Res, 11, 6045(2018).

[170] P Xiang, J S Liu, M Y Li et al. In situ electronic structure study of epitaxial niobium thin films by angle-resolved photoemission spectroscopy. Chin Phys Lett, 34, 077402(2017).

[171] T Zhou, M Y Tong, Y Zhang et al. Topological phase transition in Sb-doped Mg3Bi2 monocrystalline thin films. Phys Rev B, 103, 125405(2021).

[172] Y Liu, H P Nair, J P Ruf et al. Revealing the hidden heavy Fermi liquid in CaRuO3. Phys Rev B, 98, 041110(2018).

[173] Z C Huang, Y J Pu, H C Xu et al. Electronic structure and superconductivity of single-layer FeSe on Nb: SrTiO3/LaAlO3 with varied tensile strain. 2D Mater, 3, 014005(2016).

[174] G J P Abreu, R Paniago, H D Pfannes. Growth of ultra-thin FeO(100) films on Ag(100): A combined XPS, LEED and CEMS study. J Magn Magn Mater, 349, 235(2014).

[175] G D Soria, K Freindl, J E Prieto et al. Growth and characterization of ultrathin cobalt ferrite films on Pt(111). Appl Surf Sci, 586, 152672(2022).

[176] N Khalid, J Y Kim, A Ionescu et al. Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure. J Appl Phys, 123, 103901(2018).

[177] Y P Li, H Q Wang, K Ibrahim et al. Interfacial electronic states of misfit heterostructure between hexagonal ZnO and cubic NiO. Phys Rev Materials, 4, 124601(2020).

[178] A Seiler, O Bauder, S Ibrahimkutty et al. Growth and structure characterization of EuSi2 films and nanoislands on vicinal Si(001) surface. J Cryst Growth, 407, 74(2014).

[179] A S Kilian, F Bernardi, A Pancotti et al. Atomic structure of Cr2O3/Ag(111) and Pd/Cr2O3/Ag(111) surfaces: A photoelectron diffraction investigation. J Phys Chem C, 118, 20452(2014).

[180] S Madisetti, V Tokranov, A Greene et al. Growth of strained InGaSb quantum wells for p-FET on Si: Defects, interfaces, and electrical properties. J Vac Sci Technol B, 32, 051206(2014).

[181] C M Zhang, K Alberi, C Honsberg et al. Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer. Appl Surf Sci, 549, 149245(2021).

[182] N G Galkin, K N Galkin, A V Tupkalo et al. A low temperature growth of Ca silicides on Si(100) and Si(111) substrates: Formation, structure, optical properties and energy band structure parameters. J Alloys Compd, 813, 152101(2020).

[183] R Peng, H C Xu, M Xia et al. Tuning the dead-layer behavior of La0.67Sr0.33MnO3/SrTiO3 via interfacial engineering. Appl Phys Lett, 104, 081606(2014).

[184] C C Fan, Z T Liu, S H Cai et al. Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices. AIP Adv, 7, 085307(2017).

[185] R Lingaparthi, N Dharmarasu, K Radhakrishnan et al. In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications. Thin Solid Films, 708, 138128(2020).

[186] R Aidam, E Diwo, N Rollbühler et al. Strain control of AlGaN/GaN high electron mobility transistor structures on silicon (111) by plasma assisted molecular beam epitaxy. J Appl Phys, 111, 114516(2012).

[187] M Levillayer, A Arnoult, I Massiot et al. As-grown InGaAsN subcells for multijunction solar cells by molecular beam epitaxy. IEEE J Photovolt, 11, 1271(2021).

[188] C Cornille, A Arnoult, Q Gravelier et al. Links between bismuth incorporation and surface reconstruction during GaAsBi growth probed by in situ measurements. J Appl Phys, 126, 093106(2019).

[189] D V Nechaev, O A Koshelev, V V Ratnikov et al. Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE. Superlattices Microstruct, 138, 106368(2020).

[190] K Hoefer, C Becker, D Rata et al. Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films. Proc Natl Acad Sci USA, 111, 14979(2014).

[191] R N Jacobs, B Pinkie, J Arias et al. In situ band-edge monitoring of Cd1−yZnyTe substrates for molecular beam epitaxy of HgCdTe. J Electron Mater, 48, 6138(2019).

[192] Y Y Lo, M F Huang, Y C Chiang et al. Effect of indium accumulation on the characteristics of a-plane InN epi-films under different growth conditions. Thin Solid Films, 589, 322(2015).

[193] A Mandziak, J de la Figuera, J E Prieto et al. Combining high temperature sample preparation and in situ magnetic fields in XPEEM. Ultramicroscopy, 214, 113010(2020).

[194] V M Pereira, C N Wu, C E Liu et al. Molecular beam epitaxy preparation and in situ characterization of FeTe thin films. Phys Rev Materials, 4, 023405(2020).

[195] A Mandziak, J de la Figuera, S Ruiz-Gómez et al. Structure and magnetism of ultrathin nickel-iron oxides grown on Ru(0001) by high-temperature oxygen-assisted molecular beam epitaxy. Sci Rep, 8, 17980(2018).

[196] M Sawada, T Ueno, T Tagashira et al. XMCD experimental station optimized for ultrathin magnetic films at HiSOR-BL14. AIP Conference Proceedings, 1234, 939(2010).

[197] R Forker, M Gruenewald, T Fritz. Optical differential reflectance spectroscopy on thin molecular films. Annu Rep Prog Chem, Sect C: Phys Chem, 108, 34(2012).

[198] A W Jackson, P R Pinsukanjana, A C Gossard et al. In situ monitoring and control for MBE growth of optoelectronic devices. IEEE J Sel Top Quantum Electron, 3, 836(1997).

[199] P Das, N N Halder, R Kumar et al. Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility. Electron Mater Lett, 10, 1087(2014).

[200] T Ogino, S Nishimura, J I Shirakashi. Scratch nanolithography on Si surface using scanning probe microscopy: Influence of scanning parameters on groove size. Jpn J Appl Phys, 47, 712(2008).

[201] L Zhang, S F Shao. Image-based machine learning for materials science. J Appl Phys, 132, 100701(2022).

[202] H T Liang, V Stanev, A G Kusne et al. Application of machine learning to reflection high-energy electron diffraction images for automated structural phase mapping. Phys Rev Materials, 6, 063805(2022).