Infrared and Laser Engineering, Volume. 50, Issue 4, 20200231(2021)
Photoelectric characteristics of HgCdTe with Au-doping
Figures & Tables(8)
Fig. 2. Results of the temperature dependent Hall in different annealing conditions
Fig. 5. Layout of the pixels and the wiring in the testing chip (partial)
Table 1. [in Chinese]
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Samples Cd composition Concentration of doped Au Annealing condition LPEV0958A 0.219 7 8.0E+16 Hg-rich1 LPEV0956 0.216 0 8.0E+16 Hg-rich1 LPEV1042C 0.217 7 1.0E+16 Hg-rich2 LPEV0978D 0.222 3 1.0E+16 Hg-rich2 LPEV1022D 0.218 7 1.0E+16 Hg-rich2 LPEV0804C 0.218 4 1.0E+16 Te-Rich
Table 2. [in Chinese]
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Label of the pixel Test conditions Response voltage /µV D1 - 1 119 D2 is short-circuited 707.9 D5 is short-circuited 696.1 D3 is short-circuited 764.4 D7 is short-circuited 791 D4 is short-circuited 789.7 D8 is short-circuited 798.5 D6 is short-circuited 773.6 D9 is short-circuited 809.5
Table 3. [in Chinese]
View tableView in ArticleTable 3. [in Chinese]
Label of the pixel Test conditions Response voltage/µV D6 - 1 182 D1-D5，D7-D9 are short-circuited 94.7
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Yanfeng Wei, Quanzhi Sun, Juan Zhang, Ruiyun Sun. Photoelectric characteristics of HgCdTe with Au-doping[J]. Infrared and Laser Engineering, 2021, 50(4): 20200231
Paper Information
Category: Infrared technology and application
Received: Jun. 10, 2020
Accepted: --
Published Online: Jul. 30, 2021
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