Photonics Research, Volume. 10, Issue 1, A1(2022)
Miniature, highly sensitive MOSCAP ring modulators in co-optimized electronic-photonic CMOS
Fig. 1. Perspective view of the MOSCAP modulator and microscope images of the fabricated device. (a) Full three-dimensional rendering of the modulator structure as designed; (b) device cross section, showing internal structure of the resonator, doping profiles of c-Si body and p-Si gate device layers, placement of metal contacts, and optical mode profile; (c) optical micrograph of the fabricated device; (d) TEM of the full device cross section, showing the resonator structure, bus waveguide, and lower four metal layers; (e) TEM zoom-in on the guiding core of the resonator and ring-bus coupling region.
Fig. 2. Experimental data from passive optical and DC EO device characterization (device with
Fig. 3. Experimental data from DC electrical and EO device characterization for different p-Si gate doping concentrations. (a) Dependence of gate sheet resistance on acceptor concentration; (b) resonance frequency shift versus gate voltage, showing up to 90 GHz shift for gate voltages between 0 and 4 V; (c) modulator shift efficiency at different bias points, showing 30 GHz/V resonance modulation efficiency above 2 V; (d) resonance intrinsic quality factor versus gate voltage.
Fig. 4. Experimental results from high-speed EO characterization of modulators. (a) Normalized EO response of the modulator with gate sheet resistance of
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Hayk Gevorgyan, Anatol Khilo, Mark T. Wade, Vladimir M. Stojanović, Miloš A. Popović. Miniature, highly sensitive MOSCAP ring modulators in co-optimized electronic-photonic CMOS[J]. Photonics Research, 2022, 10(1): A1
Special Issue: NEXT-GENERATION SILICON PHOTONICS
Received: Jul. 29, 2021
Accepted: Nov. 13, 2021
Published Online: Dec. 23, 2021
The Author Email: Hayk Gevorgyan (hayk@bu.edu), Miloš A. Popović (mpopovic@bu.edu)