Infrared and Laser Engineering, Volume. 52, Issue 2, 20220371(2023)
Progress in growth control and applications of optoelectronic devices of bismuthene
Fig. 5. (a) Optical photographs of thin film samples grown on SiO2 and Al2O3; (b) TEM image; (c), (d) HRTEM images; (e) The schematic of FETs based on Bi film[51]
Fig. 7. (a) Schematic illustration of liquid phase exfoliation; (b) HRTEM image; (c) SEM image; (d) AFM image; (e) Schematic of mode-locked fiber laser with a microfiber-based bismuthene SA[44]
Fig. 9. (a) Bismuthene subcarbonate crystal structure; (b) Schematic illustration of electrochemical exfoliation; (c) TEM image; (d) HRTEM image; (e) SEAD pattern[46]
Fig. 11. (a) XRD patterns; (b) TEM image; (c) HRTEM image; (d) SAED pattern; (e) AFM image; (f) The corresponding height profiles[63]
Fig. 12. (a) Schematic of modelocked 2 μm Tm-doped fiber laser with the as-fabricated bismuthene SA; (b) Laser pulse train; (c) Single pulse [45]
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Yanyan Zhan, Bingxue Li, Hao Yan, Xuan Fang, Dengkui Wang, Dan Fang, Xueying Chu, Yingjiao Zhai, Jinhua Li, Xiaohua Wang. Progress in growth control and applications of optoelectronic devices of bismuthene[J]. Infrared and Laser Engineering, 2023, 52(2): 20220371
Category: Optical devices
Received: May. 31, 2022
Accepted: --
Published Online: Mar. 13, 2023
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