INFRARED, Volume. 41, Issue 8, 15(2020)
Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors
[1] [1] Lei W, Gu R J, Antoszewski J, et al. MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates [J]. Journal of Electronic Materials, 2015, 44(9): 3180-3187.
[2] [2] Lei W, Gu R J, Antoszewski J, et al. GaSb:A New Alternative Substrate for Epitaxial Growth of HgCdTe [J]. Journal of Electronic Materials, 2014, 43(8): 2788-2794.
[3] [3] Cervera C, Ribet-Mohamed I, Taalat R, et al. Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain [J]. Journal of E- lectronic Materials, 2012, 41(10): 2714-2718.
[4] [4] Chen M J, Li M Q, Cheng J, et al. Study on Characteristic Parameters Influencing Laser-induced Damage Threshold of KH2PO4 Crystal Surface Machined by Single Pointdiamond Turning [J]. Journal of Applied Physics, 2011, 110:113103.
[10] [10] Grzesik M, Vangala S R, Goodhue W D, et al. Indirect Wafer Bonding and Epitaxial Transfer of GaSb-based Materials [J]. Journal of Electronic Materials, 2013, 42(4): 679683.
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CHENG Yu, BAO Ying-hao, XIAO Yu, LI Chun-ling, KANG Zhe, LIU Ming. Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors[J]. INFRARED, 2020, 41(8): 15
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Received: Jun. 27, 2020
Accepted: --
Published Online: Nov. 4, 2020
The Author Email: Yu CHENG (chengyu0431@aliyun.com)