INFRARED, Volume. 41, Issue 8, 15(2020)

Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors

Yu CHENG*... Ying-hao BAO, Yu XIAO, Chun-ling LI, Zhe KANG and Ming LIU |Show fewer author(s)
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    References(5)

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    [3] [3] Cervera C, Ribet-Mohamed I, Taalat R, et al. Dark Current and Noise Measurements of an InAs/GaSb Superlattice Photodiode Operating in the Midwave Infrared Domain [J]. Journal of E- lectronic Materials, 2012, 41(10): 2714-2718.

    [4] [4] Chen M J, Li M Q, Cheng J, et al. Study on Characteristic Parameters Influencing Laser-induced Damage Threshold of KH2PO4 Crystal Surface Machined by Single Pointdiamond Turning [J]. Journal of Applied Physics, 2011, 110:113103.

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    CHENG Yu, BAO Ying-hao, XIAO Yu, LI Chun-ling, KANG Zhe, LIU Ming. Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors[J]. INFRARED, 2020, 41(8): 15

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    Paper Information

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    Received: Jun. 27, 2020

    Accepted: --

    Published Online: Nov. 4, 2020

    The Author Email: Yu CHENG (chengyu0431@aliyun.com)

    DOI:10.3969/j.issn.1672-8785.2020.08.003

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