INFRARED, Volume. 41, Issue 8, 15(2020)
Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors
In long-wave infrared region, InAs/GaSb type-Ⅱ superlattice material has more superior performance than HgCdTe, thus has been widely studied. A series of experiments were carried out on the InAs/GaSb type-Ⅱ superlattice infrared detector to improve the technology level of back thinning. For <100> GaSb single wafers, different single-point diamond turning (SPDT), mechanical chemical polishing and chemical polishing methods were studied. The machining damage was removed. Through the experiments of InAs/GaSb type-Ⅱ superlattice infrared devices, good infrared imaging pictures were obtained by the long-wave detector assembly, which can improve the technology level of InAs/GaSb type-Ⅱ superlattice long-wave infrared detector.
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CHENG Yu, BAO Ying-hao, XIAO Yu, LI Chun-ling, KANG Zhe, LIU Ming. Study on Back Thinning Technologies of Long-wave InAs/GaSb Type-Ⅱ Superlattice Infrared Detectors[J]. INFRARED, 2020, 41(8): 15
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Received: Jun. 27, 2020
Accepted: --
Published Online: Nov. 4, 2020
The Author Email: Yu CHENG (chengyu0431@aliyun.com)