Journal of Terahertz Science and Electronic Information Technology , Volume. 22, Issue 3, 290(2024)

Design of 260 GHz GaN frequency tripler with high output power

SHENG Baicheng1... SONG Xubo2,*, GU Guodong1, ZHANG Lisen2, LIU Shuai1, WAN Yue1, WEI Bihua1, LI Pengyu1, HAO Xiaolin1, LIANG Shixiong2 and FENG Zhihong2 |Show fewer author(s)
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    References(11)

    [1] [1] CUADRADO-CALLE D, PIIRONEN P. Solid-state diode technology for millimeter and submillimeter-wave remote sensing applications:current status and future trends[J]. IEEE Microwave Magazine, 2022,23(6):44-56. doi:10.1109/MMM.2022.3155031.

    [3] [3] MEHDI I,SILES J V,LEE C,et al. THz diode technology:status prospects and applications[J]. Proceedings of the IEEE, 2017,105(6):990-1007. doi:10.1109/JPROC.2017.2650235.

    [4] [4] ERICKSON N. High efficiency submillimeter frequency multipliers[C]// 1990 IEEE International Digest on Microwave Symposium. Dalls,US:IEEE, 1990:1301-1304. doi:10.1109/MWSYM.1990.99817.

    [5] [5] TIAN Yaoling,HUANG Kun,CEN Jina,et al. High power single and power-combined 100~115 GHz Schottky balanced doublers[J]. Journal of Infrared and Millimeter Waves, 2021,40(1):13-18. doi:10.11972/j.issn.1001-9014.2021.01.003.

    [6] [6] SILES J V, COOPER K B, LEE C,et al. A new generation of room-temperature frequency-multiplied sources with up to 10× higher output power in the 160 GHz~1.6 THz range [J]. IEEE Transactions on Terahertz Science and Technology, 2018, 8(6):596-604. doi:10.1109/TTHZ.2018.2876620.

    [7] [7] MORO-MELGAR D, COJOCARI O, OPREA I. High power high efficiency 270~320 GHz source based on discrete Schottky diodes[C]// 2018 the 15th European Microwave Conference. Madrid, Spain: IEEE, 2018: 337-340. doi: 10.23919/EuRAD. 2018.8546616.

    [9] [9] SONG Xubo,LIANG Shixiong,LYU Yuanjie,et al. GaN-based frequency doubler with pulsed output power over 1 W at 216 GHz[J]. IEEE Electron Device Letters., 2021,42(12):1739-1742. doi:10.1109/LED.2021.3119391.

    [10] [10] AN Ning, LI Li,WANG Weigang, et al. High-efficiency D-band monolithically integrated GaN SBD-based frequency doubler with high power handling capability[J]. IEEE Transactions on Electron Devices, 2022, 69(9): 4843-4847. doi: 10.1109/TED. 2022.3190463.

    [11] [11] LIU Honghui, LIANG Zhiwen,MENG Jin, et al. 120 GHz frequency-doubler module based on GaN Schottky barrier diode[J]. Micromachines, 2022,13(8):1172. doi:10.3390/mi13081172.

    [12] [12] DING Jiangqiao,MAESTRINI A,GATILOVA L, et al. A 300 GHz power-combined frequency doubler based on E-plane 90o-hybrid and Y-junction[J]. Microwave and Optical Technology Letters, 2020,62(8):2683-2691. doi:10.1002/mop.32146.

    [13] [13] TIAN Yaoling,LIU Ge,LI Li,et al. High efficiency 285 GHz tripler based on face-to-face differential configuration[J]. Journal of Infrared Millimeter Waves, 2022,41(4):739-744. doi:10.11972/j.issn.1001-9014.2022.04.013.

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    SHENG Baicheng, SONG Xubo, GU Guodong, ZHANG Lisen, LIU Shuai, WAN Yue, WEI Bihua, LI Pengyu, HAO Xiaolin, LIANG Shixiong, FENG Zhihong. Design of 260 GHz GaN frequency tripler with high output power[J]. Journal of Terahertz Science and Electronic Information Technology , 2024, 22(3): 290

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    Paper Information

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    Received: Jun. 15, 2023

    Accepted: --

    Published Online: Aug. 14, 2024

    The Author Email: Xubo SONG (songxb@cetc13.cn)

    DOI:10.11805/tkyda2023168

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