Exploring heteroepitaxial growth and electrical properties of α-Ga2O3 films on differently oriented sapphire substrates

Wei Wang; Shudong Hu; Zilong Wang; Kaisen Liu; Jinfu Zhang; Simiao Wu; Yuxia Yang; Ning Xia; Wenrui Zhang; Jichun Ye

doi:10.1088/1674-4926/44/6/062802

Journal of Semiconductors, Volume. 44, Issue 6, 062802(2023)

Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates

Wei Wang^1,2, Shudong Hu¹, Zilong Wang¹, Kaisen Liu¹, Jinfu Zhang¹, Simiao Wu¹, Yuxia Yang¹, Ning Xia³, Wenrui Zhang^1,4、*, and Jichun Ye^1,4、**

Author Affiliations

¹Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

²The Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China

³Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou 311200, China

⁴Yongjiang Laboratory, Ningbo 315201, China

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Figures & Tables(7)

Fig. 1. (Color online) (a) Schematic diagram of various crystal planes in the corundom structure. (b) The lattice mismatch between different crystal planes α-Ga₂O₃ films and corresponding sapphire substrates.

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Fig. 2. (Color online) (a) XRDθ–2θ full scans ofα-Ga₂O₃ thin films grown on a-plane, m-plane, and r-plane sapphire substrates. (b) XRD $ϕ$ -scans of ( $30 \bar{3} 0$ ) plane, ( $02 \bar{2} 4$ ) plane, and ( $11 \bar{2} 0$ ) plane of correspondingα-Ga₂O₃ films and the underlying sapphire, respectively. (c) Raman scattering spectra ofα-Ga₂O₃ thin films grown on a-plane, m-plane, and r-plane sapphire substrates. (d) XRD rocking curves around theα-Ga₂O₃ ( $11 \bar{2} 0$ ) peak grown on a-plane sapphire,α-Ga₂O₃ ( $30 \bar{3} 0$ ) peak grown on m-plane sapphire, andα-Ga₂O₃ ( $02 \bar{2} 4$ ) peak grown on r-plane sapphire.

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Fig. 3. (Color online) Schematic of growth relation of α-Ga₂O₃ grown on (a) a-plane, (b) m-plane, and (c) r-plane sapphire substrates by PLD.

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Fig. 4. (Color online) XPS spectra of O 1s peak of α-Ga₂O₃ films grown on (a) a-plane, (b) m-plane, and (c) r-plane sapphire substrates.

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Fig. 5. (Color online) (a) Transmittance spectra and (b) Tauc plot of the a-plane, m-plane, and r-plane α-Ga₂O₃ thin films grown on various plane sapphire substrates.

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Fig. 6. (Color online) Fitting plots of temperature-dependent resistance deriving the activation energy for a-plane, m-plane, and r-plane α-Ga₂O₃ thin films.

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Table 1. Film thicknesses, conductivities, mobilities, and carrier concentrations for α-Ga₂O₃ thin films grown on a-, c- and r-plane sapphire substrates.
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Table 1. Film thicknesses, conductivities, mobilities, and carrier concentrations for α-Ga₂O₃ thin films grown on a-, c- and r-plane sapphire substrates.
Substrate Thickness (nm) σ (S/cm) μ (cm²/(V·s)) n (10¹⁷ cm⁻³)
a-sapphire 302 Exceed test limit (<0.03) – –
m-sapphire 280 0.29 12.2 1.45
r-sapphire 273 2.71 1.35 125

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Wei Wang, Shudong Hu, Zilong Wang, Kaisen Liu, Jinfu Zhang, Simiao Wu, Yuxia Yang, Ning Xia, Wenrui Zhang, Jichun Ye. Exploring heteroepitaxial growth and electrical properties of α-Ga₂O₃ films on differently oriented sapphire substrates[J]. Journal of Semiconductors, 2023, 44(6): 062802

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Paper Information

Category: Articles

Received: Dec. 28, 2022

Accepted: --

Published Online: Jul. 6, 2023

The Author Email: Zhang Wenrui (zhangwenrui@nimte.ac.cn), Ye Jichun (jichun.ye@nimte.ac.cn)

DOI:10.1088/1674-4926/44/6/062802

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Film thicknesses, conductivities, mobilities, and carrier concentrations for α-Ga2O3 thin films grown on a-, c- and r-plane sapphire substrates.

Table 1. Film thicknesses, conductivities, mobilities, and carrier concentrations for α-Ga2O3 thin films grown on a-, c- and r-plane sapphire substrates.

Table 1. Film thicknesses, conductivities, mobilities, and carrier concentrations for α-Ga₂O₃ thin films grown on a-, c- and r-plane sapphire substrates.

Table 1. Film thicknesses, conductivities, mobilities, and carrier concentrations for α-Ga₂O₃ thin films grown on a-, c- and r-plane sapphire substrates.