Fig. 1. 3D schematics of the designed GeSn photodetectors based on different architectures. (a) GeSn on SOUP waveguide integrated with the Si₃N₄ liner stressor. Three-dimensional schematics of GeSn detectors with (b) pillar and (c) fin array integrated with the Si₃N₄ liner stressor on Si platform. Figure reproduced from: (a) ref. ²⁶, Optical Society of America; (b, c) ref. ³³, IEEE.

Fig. 2. E-k energy band diagrams of relaxed and strained GeSn devices. (a) Relaxed Ge_0.90Sn_0.10. (b) Tensile strained Ge_0.90Sn_0.10 in fin array detector with the L_pillar of 200 nm. (c) Tensile strained Ge_0.90Sn_0.10 in pillar array detector with the L_pillar of 200 nm. (d) Tensile strained Ge_0.90Sn_0.10 on SOUP waveguide. Figure reproduced from: (a, b, c) ref. ³³, IEEE; (d) ref. ²⁶, Optical Society of America.

Fig. 3. (a) Comparisons of the absorption spectra of relaxed and strained GeSn in fin and pillar array detectors at the Sn content of 0.1. L_pillar and T_fin feature size varys from 100 nm to 500 nm in a step of 100 nm. (b) Calculated absorption spectra for relaxed and tensile strained GeSn waveguide photodetectors at different Sn content. Figure reproduced from: (a) ref. ³³, IEEE; (b) ref. ²⁶, Optical Society of America.

Fig. 4. Modeled α as a function of wavelength at different electric fields at (a) Ge_0.97Sn_0.03, (b) Ge_0.95Sn_0.05, and (c) Ge_0.9Sn_0.1, respectively. Figure reproduced from ref. ²⁶, Optical Society of America.

Fig. 5. Mode profiles of both TE and TM modes at different wavelengths in Ge_0.90Sn_0.10 waveguide. Figure reproduced from ref. ²⁶, Optical Society of America.

Fig. 6. Propagation loss of (a) TE mode and (b) TM mode in tensile strained Ge_0.90Sn_0.10 waveguide at various biases. Figure reproduced from ref. ²⁶, Optical Society of America.

Fig. 7. 3D schematic of the Ge_1-xSn_x/Si_1-y-zGe_ySn_z MQW laser wrapped in a Si₃N₄ liner stressor. Figure reproduced from ref. ³⁶, IEEE.

Fig. 8. Contour plots for (a) ε_[100], (b) ε_[010], and (c) ε_[001] in the normal cross section plane and (d) ε_[100], (e) ε_[010], and (f) ε_[001] in the radial cross section plane in GeSn well for the Ge_0.90Sn_0.10/Si_0.161Ge_0.695Sn_0.144 MQW laser wrapped in a 500 nm Si₃N₄ liner stressor. Figure reproduced from ref. ³⁶, IEEE.

Fig. 9. (a) Modeled J_th as a function of the Sn composition in GeSn wells for relaxed and tensile strained GeSn/SiGeSn MQW lasers wrapped in a 500 nm Si₃N₄ liner stressor. L_z is 7 nm and n_well is 20. (b) Modeled optical gain α as a function of injected current density J for the relaxed and tensile strained MQW lasers. Figure reproduced from ref. ³⁶, IEEE.

Fig. 10. 3D schematic of lattice-matched GeSn/SiGeSn DH LED wrapped in a Si₃N₄ liner stressor. Figure reproduced from ref. ³⁷, Optical Society of America.

Fig. 11. (a) Modeled strain components as a function of Sn composition in the intrinsic GeSn layer. (b) Comparison of E_{G, Γ} and E_{G, L} in relaxed and strained GeSn with various Sn compositions. Figure reproduced from ref. ³⁷, Optical Society of America.

Fig. 12. Calculated spontaneous emission spectra for the direct transition of GeSn in the lattice-matched GeSn/SiGeSn DHLEDs (a) under different strain status, (b) with different Sn compositions, (c) with different n_injected, and (d) with various n_doping. For all the curves, the stronger and weaker peaks represent r_{sp, HH} and r_{sp, LH}, respectively. Figure reproduced from ref. ³⁷, Optical Society of America.

Fig. 13. η_IQE versus Sn composition characteristics of lattice-matched GeSn/SiGeSn DH LEDs with the τ_SRH of 100 and 50 ns. (a) Relaxed and tensile strained GeSn devices. (b) Strained GeSn devices wrapped in a Si₃N₄ liner stressor with different values of n_injected. (c) Strained devices with different n_doping. Figure reproduced from ref. ³⁷, Optical Society of America.