Preparation of MCNO thin films by solid-state reaction of oxide-metal multilayers

Fig. 6. (a) Relationship between resistance and temperature of MCN750, MCN850 and MCN950 film samples; (b) Relationship between ln (ρ/T) and (1/T^0.5) (open line) and ln (ρ/T) and (1000/T) (solid line) for MCN750, MCN850 and MCN950 film samples

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Fig. 7. Transmission spectrum (a) and absorbance spectrum (b) of MCN0, MCN750, MCN850, MCN950 films

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Table 1. Process parameters of sputtering and evaporation of MCNO films

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Table 1. Process parameters of sputtering and evaporation of MCNO films

Deposition cycle	Layersequence	Deposition layer material	Deposition thickness/nm	Deposition power/W	Vacuum degree/Pa	Depositiontemperature/℃	Deposition atmosphere
Cycle Ⅰ	1（Oxide co-deposition）	MnO₂(DC)	9.02	90	5×10⁻⁴	450	Ar >99.9%
	1（Oxide co-deposition）	Co₂O₃(RF)	11.47	100
	2 (Metal)	Ni	1.5	14.7
Cycle Ⅱ	3（Oxide co-deposition）	MnO₂(DC)	9.02	90
	3（Oxide co-deposition）	Co₂O₃(RF)	11.47	100
	4 (Metal)	Ni	1.5	14.7
......	......	......	......	......
Termination layer	15（Oxide co-deposition）	MnO₂(DC)	9.02	90
Termination layer	15（Oxide co-deposition）	Co₂O₃(RF)	11.47	100

Table 2. Half-peak width, grain size and lattice constant of MCN750, MCN850 and MCN950 at (111) diffraction peak position
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Table 2. Half-peak width, grain size and lattice constant of MCN750, MCN850 and MCN950 at (111) diffraction peak position
Sample FWHM(111) Peak position(2θ)/(°) Grain size/nm Lattice constant/Å
MCN750 0.77 18.93 11.16 8.71
MCN850 0.48 18.93 17.91 8.70
MCN950 0.36 18.97 23.87 8.69

Table 3. Valence state distribution and relative proportion of MCN0, MCN750, MCN850, and MCN950
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Table 3. Valence state distribution and relative proportion of MCN0, MCN750, MCN850, and MCN950
Sample Mn²⁺∶Mn³⁺∶Mn⁴⁺ Mn⁴⁺/Mn³⁺
MCN0 0.53∶0.27∶0.20 0.74
MCN750 0.49∶0.29∶0.21 0.75
MCN850 0.41∶0.26∶0.25 0.96
MCN950 0.38∶0.27∶0.30 1.11

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Yuanyuan Zhao, Yuanyuan Wang, Rongxin Wang, Zhipeng Wang, Yu Zhu, Helun Song, Yang Xiang. Preparation of MCNO thin films by solid-state reaction of oxide-metal multilayers[J]. Infrared and Laser Engineering, 2024, 53(4): 20230723

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Paper Information

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Received: Dec. 27, 2023

Accepted: --

Published Online: Jun. 21, 2024

The Author Email: Zhu Yu (yzhu2011@sinano.ac.cn)

DOI:10.3788/IRLA20230723

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Process parameters of sputtering and evaporation of MCNO films

Table 1. Process parameters of sputtering and evaporation of MCNO films

Table 2. Half-peak width, grain size and lattice constant of MCN750, MCN850 and MCN950 at (111) diffraction peak position

Table 2. Half-peak width, grain size and lattice constant of MCN750, MCN850 and MCN950 at (111) diffraction peak position

Table 3. Valence state distribution and relative proportion of MCN0, MCN750, MCN850, and MCN950

Table 3. Valence state distribution and relative proportion of MCN0, MCN750, MCN850, and MCN950