Semiconductor Optoelectronics, Volume. 44, Issue 3, 417(2023)

Analysis of the Surface Properties of Ag and p-GaP Ohm Contacts

LUO Cairen... TANG Yingwen* and ZHAO Shibin |Show fewer author(s)
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    References(3)

    [7] [7] Hibbard D L, Jung S P, Wang C, et al. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag[J]. Appl. Phys. Lett., 2003, 83(2): 311-313.

    [11] [11] Lu Z H, Hua W M, Ding Z C. Au-Zn/Au-Sb/GaP ohmic contact of GaP LED[J]. J. of Luminescence, 1988, 40/41: 806-807.

    [13] [13] Song J O, Kwak J S, Park Y, et al. Ohmic and degradation mechanisms of Ag contacts on p-type GaN[J]. Appl. Phys. Lett., 2005, 86(6): 062104-1-3.

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    LUO Cairen, TANG Yingwen, ZHAO Shibin. Analysis of the Surface Properties of Ag and p-GaP Ohm Contacts[J]. Semiconductor Optoelectronics, 2023, 44(3): 417

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    Paper Information

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    Received: Mar. 17, 2023

    Accepted: --

    Published Online: Nov. 26, 2023

    The Author Email: Yingwen TANG (28995299@qq.com)

    DOI:10.16818/j.issn1001-5868.2023031701

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