Semiconductor Optoelectronics, Volume. 45, Issue 5, 687(2024)

Design of Monolithic Integrated High-Response Photodetection Device

LI Ming1... FU Jing2, JIANG Junxian1, LIU Geyang1 and NI Piao1 |Show fewer author(s)
Author Affiliations
  • 1Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
  • 2National Key Laboratory of Integrated Circuits and Microsystems, Chongqing 400000, CHN
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    References(5)

    [1] [1] Chen W Z, Huang S H, Wu G W, et al. A 3.125 Gbps CMOS fully integrated optical receiver with adaptive analog equalizer[C]// IEEE Asian Solid-State Circuits Conference, ASSCC’07, 2007: 396-399.

    [2] [2] Radovanovic S, Annema A J, Nauta B. A 3-Gb/s optical detector in standard CMOS for 850 nm optical communication[J]. IEEE J. Solid-State Circuits, 2005, 40(8): 1706-1717.

    [3] [3] Chou Fang-Ping, Chen Guan-Yu, Wang Ching-Wen, et al. Silicon photodiodes in standard CMOS technology[J]. IEEE J. Sel. Top. Quantum Electron., 2011, 17(3): 730-740.

    [5] [5] Youn Jin-Sung, Lee Myung-Jae, Park Kang-Yeob, et al. 10-Gb/s 850-nm CMOS OEIC receiver with a silicon avalanche photodetector[J]. IEEE J. Quantum Electron., 2012, 48(2): 229-236.

    [6] [6] Radovanovic S, Annema A J, Nauta B. High-Speed Photodiodes in Standard CMOS Technology[M]. Berlin: Springer Science & Business Media, 2006.

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    LI Ming, FU Jing, JIANG Junxian, LIU Geyang, NI Piao. Design of Monolithic Integrated High-Response Photodetection Device[J]. Semiconductor Optoelectronics, 2024, 45(5): 687

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    Paper Information

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    Received: Apr. 28, 2024

    Accepted: Feb. 13, 2025

    Published Online: Feb. 13, 2025

    The Author Email:

    DOI:10.16818/j.issn1001-5868.2024042805

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