To address the compatibility issue of photodetection units with standard processes and the difficulty in combining monolithic integration with process technology, a monolithic integrated high-response photodetection device based on complementary bipolar standard process is proposed. A monolithic integration scheme for photodetectors accompanied by a signal-processing circuit is adopted to conduct the design and simulation of a high-response photodetection unit and a low-latency, high-rate signal-processing unit, thus realizing the monolithic integration of the device, process-technology merging, and high-response photodetection. Test results show that the photoelectric response characteristics and signal-processing functions are normal, and the required photoelectric detection parameters such as high response (peak response reaching 0.462 A/W), high data output rate (maximum of 12 Mbd), low transmission delay (less than 41.8 ns), low output logic level (0.15 V), and low output leakage (less than 1.5 μA) are achieved. The overall technical performance of the proposed device is excellent and satisfies the application requirements of miniaturized, highly integrated, and low-cost photodetection systems.