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Journal of Terahertz Science and Electronic Information Technology , Volume. 20, Issue 9, 908(2022)

Impacts of ambient temperature on the total ionizing dose effect of SiC MOSFET

PU Xiaojuan1,2,3、*, FENG Haonan1,2,3, LIANG Xiaowen1,2,3, WEI Ying1,2,3, YU Xuefeng1,2, and GUO Qi1,2,3
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    PU Xiaojuan, FENG Haonan, LIANG Xiaowen, WEI Ying, YU Xuefeng, GUO Qi. Impacts of ambient temperature on the total ionizing dose effect of SiC MOSFET[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 908

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    Received: Jan. 5, 2022

    Accepted: --

    Published Online: Oct. 28, 2022

    The Author Email: Xiaojuan PU (puxiaojuan20@mails.ucas.ac.cn)

    DOI:10.11805/tkyda2022008

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology