The total ionizing dose effect of Silicon Carbide(SiC) Metal-Oxidel-Semiconductor Field Effect Transistor(MOSFET) at different temperatures studied. devices manufactured at home and abroad are irradiated by 60Coγraisy.TheradiationThreedamagSiCecharacteMOSFETristics of threshold voltage, breakdown voltage, conduction resistance and leakage current are obtained at 25 ℃ , 100 ℃ and 175 ℃ , respectively. The degradation degree of the devices after irradiation at different temperatures are compared. The results show that the threshold voltage, static leakage current and sub-threshold characteristics of different devices are sensitive to ambient temperature, while the on-resistance and breakdown voltage are relatively insensitive. In addition, the sensitivity of the total ionizing response of SiC MOSFET to ambient temperature also varies with different manufacturers. It is found that the threshold voltage, static leakage and other parameters decrease with the increase of temperature due to the the tunneling annealing effect during high temperature irradiation.