Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures

Mohammad Hosseini; Hassan Kaatuzian; Iman Taghavi

doi:10.3788/COL201715.062501

Chinese Optics Letters, Volume. 15, Issue 6, 062501(2017)

Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures

Mohammad Hosseini¹, Hassan Kaatuzian^1、*, and Iman Taghavi²

¹Photonics Research Laboratory, Electrical Engineering Department, Amirkabir University of Technology, Tehran 15914, Iran

²Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, 30332, USA

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Cited By

[1] Behzad Namvar, Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi. Design of high-performance double quantum well vertical cavity transistor lasers with GRIN base region. Applied Physics B, 125, 207(2019).

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Mohammad Hosseini, Hassan Kaatuzian, Iman Taghavi, "Graded index separate confinement heterostructure transistor laser: analysis of various confinement structures," Chin.Opt.Lett. 15, 062501 (2017)

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Paper Information

Category: Optoelectronics

Received: Oct. 31, 2016

Accepted: Feb. 24, 2017

Published Online: Jul. 20, 2018

The Author Email: Hassan Kaatuzian (hsnkato@aut.ac.ir)

DOI:10.3788/COL201715.062501

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology