[1] [1] Zhang Zhongwei, Lu Jianfeng, Chi Weiying, et al. Technique development and prospects analysis of GaAs solar cell [J].Aerospace Shanghai, 2003, 20(3): 33-38. (in Chinese)

[2] [2] Raj K Jain. Calculated performance of Indium Phosphide solar cells under monochromatic illumination [J]. IEEE Transactions on Electron Devices, 1993, 40(10): 1893-1895.

[3] [3] Roensch S, Hoheisel R, Dimroth F, et al. Subcell IV characteristic analysis of GaInP/GaInAs/Ge solar cells using electroluminescence measurements[J]. Applied Physics Letters, 2011, 98(25): 251113.

[4] [4] Zhu Rongzhen, Wang Rui, Jiang Tian, et al. Research of laser irradiation effect on monocrystalline silicon solar cells and single junction GaAs solar cells[J]. J Infrared Millim Waves, 2015, 34(4): 479-485. (in Chinese)

[5] [5] Zheng Y, Yi T C, Wang J L, et al. Radiation damage analysis of individual subcells for GaInP/GaAs/Ge solar cells using photoluminescence measurements[J]. Chinese Physics Letters, 2017, 34(2): 026101.

[6] [6] Lu Weiming, Li Sheng, Zhang Fute, et al. Defect detection of solar cell based on electroluminescence and thermography imaging with different bias voltage[J]. Chinese Journal of Luminescence, 2014, 35(12): 1511-1519. (in Chinese)

[7] [7] Shanghai Institute of Space Power-Sources. Physical Power Technology[M]. Beijing: Science Press, 2015: 2-3, 45-51, 135-140. (in Chinese)

[8] [8] Ding Weihuan, Zhang Liang, Shen Zhonghua, et al. Analyse on the thermal interaction of the long pulse high power laser and semiconductor[J]. Infrared & Laser Engineering, 2007, 36(S1): 332-335. (in Chinese)

[9] [9] Lee K H, Shin W S, Kang E C. Analysis of optical damage in germanium induced by a continuous wave laser[J]. Applied Optics, 2013, 52(10): 2055-2061.