Fig. 1. geometric model and mathematical model of coplanar waveguides

Fig. 2. The characteristic impedance varies with the change of the width of the intermediate signal electrode

Fig. 3. The characteristic impedance varies with the size of the electrode spacing

Fig. 4. The characteristic impedance varies with the ratio between the two electrodes

Fig. 5. Simulation results of reflection characteristics of S₂₂

Fig. 6. Simulation results of S₂₁ transmission characteristics

Fig. 7. Coplanar slide design

Fig. 8. Wet etching road map of GaAs coplanar electrode process

Fig. 9. Schematic diagram of temporary unbonding technology

Fig. 10. Trial-production roadmap of ion beam etching for GaAs coplanar electrode process

Fig. 11. Schematic diagram of the principle of ion beam etching and GaAs mask plate used in etching

Fig. 12. Diagram of finished product prepared by wet etching and ion beam etching

Fig. 13. Reflectance and transmission curves for electrode lengths of 2 mm，4 mm and 6 mm