[1] [1] TOYODA GOSEI Co., Ltd. Toyoda Gosei Succeeds in Making Larger GaN Substrates for Next-Generation Power Devices［EB/OL］. (2022-03-15). ［2022-10-30］. https://www.toyoda-gosei.com/news/detail/?id=306.

[4] [4] DALMAU R, BRITT J, FANG H, et al. X-ray topography characterization of large diameter AlN single crystal substrates［J］. Mater Sci Forum, 2020, 1004: 63-68.

[5] [5] MOKHOV E N, ARGUNOVA T S, JE J H, et al. Freestanding single crystal AlN layers grown using the SiC substrate evaporation method［J］. CrystEngComm, 2017, 19(23): 3192-3197.

[6] [6] SUMATHI R R, GILLE P. Role of SiC substrate polarity on the growth and properties of bulk AlN single crystals［J］. J Mater Sci-Mater Electron, 2014, 25(9): 3733-3741.

[7] [7] WANG Q, LEI D, HE G, et al. Characterization of 60 mm AlN single crystal wafers grown by the physical vapor transport method［J］. Phys Status Solidi (A), 2019, 216(16): 1900118.

[8] [8] WANG G, ZHANG L, WANG Y, et al. Effect of temperature gradient on AlN crystal growth by PVT method［J］. Cryst Growth Des, 2019, 19, 6736-6742.

[9] [9] HARTMANN C, WOLLWEBER J, DITTMAR A, et al. Preparation of bulk AlN seeds by spontaneous nucleation of freestanding crystals［J］. Jpn J Appl Phys, 2013, 52(8S): 08JA06.

[11] [11] LU P, COLLAZO R, DALMAU R F, et al. Seeded growth of AlN bulk crystals in m-and c-orientation［J］. J Cryst Growth, 2009, 312(1): 58-63.

[12] [12] BONDOKOV R T, MUELLER S G, MORGAN K E, et al. Large-area AlN substrates for electronic applications: An industrial perspective［J］. J Cryst Growth, 2008, 310(17): 4020-4026.

[13] [13] RAGHOTHAMACHAR B, DUDLEY M, ROJO J C, et al. X-ray characterization of bulk AIN single crystals grown by the sublimation technique［J］. J Cryst Growth, 2003, 250(1-2): 244-250.

[14] [14] HEIMANN P, EPELBAUM B M, BICKERMANN M, et al. The initial growth stage in PVT growth of aluminum nitride［J］. Phys Status Solidi C, 2006, 3(6): 1575-1578.

[15] [15] BESHKOVA M, ZAKHARIEV Z, BIRCH J, et al. Sublimation epitaxy of AlN layers on 4H-SiC depending on the type of crucible. J Mater Sci-Mater Electron, 2003, 14(10): 767-768.

[16] [16] NAGAI I, KATO T, MIURA T, et al. AlN bulk single crystal growth on 6H-SiC substrates by sublimation method［J］. J Cryst Growth, 2010, 312(19): 2699-2704.

[17] [17] KINOSHITA T, YANAGI H, INOUE S. Polarity control of AlN layers grown on sapphire substrates by oxygen doping during AlN nucleation［J］. J Cryst Growth, 2014, 386: 76-79.

[18] [18] VAN VECHTEN J A. Quantum dielectric theory of electronegativity in covalent systems. III. Pressure-temperature phase diagrams, heats of mixing, and distribution coefficients［J］. Phys Rev B, 1973, 7(4): 1479.

[19] [19] MORKO H. Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth［M］. John Wiley & Sons, 2009.

[21] [21] HARTMANN C, ALBRECHT M, WOLLWEBER J, et al. SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen［J］. J Cryst Growth, 2012, 344(1): 19-26.

[22] [22] HARRIS G L. Properties of silicon carbide［M］. London: The Institution of Electrical Engineers, 1995.

[23] [23] CASADY J B, JOHNSON R W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review［J］. Solid-State Electron, 1996, 39(10): 1409-1422.

[24] [24] LI Z, BRADT R C. Thermal expansion of the hexagonal (4H) polytype of SiC［J］. J Appl Phys, 1986, 60(2): 612-614.

[25] [25] LIU L, EDGAR J H. Substrates for gallium nitride epitaxy［J］. Mater Sci Eng R Rep, 2002, 37(3): 61-127.

[26] [26] HERRO Z G, ZHUANG D, SCHLESSER R, et al. Growth of AlN single crystalline boules［J］. J Cryst Growth, 2010, 312(18): 2519-2521.

[27] [27] GONG X, XU K, HUANG J, et al. Evolution of the surface morphology of AlN epitaxial film by HVPE［J］. J Cryst Growth, 2015, 409: 100-104.

[28] [28] SAHAR M M, HASSAN Z, NG S S, et al. An insight into growth transition in AlN epitaxial films produced by metal-organic chemical vapour deposition at different growth temperatures［J］. Superlattices Microstruct, 2022, 161: 107095.

[29] [29] YONEMURA M, KAMEI K, MUNETOH S. Precipitation of single crystalline AlN from Cu-Al-Ti solution under nitrogen atmosphere［J］. J Mater Sci Mater Electron, 2005, 16(4): 197-201.

[30] [30] RIZZI A, LANTIER R, MONTI F, et al. AlN and GaN epitaxial heterojunctions on 6H-SiC (0001): valence band offsets and polarization fields［J］. J Vac Sci Technol B, 1999, 17(4): 1674-1681.

[31] [31] FIGUEROA U, SALAS O, OSEGUERA J. Production of AlN films: ion nitriding versus PVD coating［J］. Thin Solid Films, 2004, 469: 295-303.

[32] [32] MAKAROV Y N, AVDEEV O V, BARASH I S, et al. Experimental and theoretical analysis of sublimation growth of AlN bulk crystals［J］. J Cryst Growth, 2008, 310(5): 881-886.

[33] [33] HERRO Z G, ZHUANG D, SCHLESSER R, et al. Seeded growth of AlN on N-and Al-polar AlN seeds by physical vapor transport［J］. J Cryst Growth, 2006, 286(2): 205-208.

[34] [34] FU D, LEI D, LI Z, et al. Toward φ56 mm Al-polar AlN single crystals grown by the homoepitaxial PVT method［J］. Cryst Growth Des, 2022, 22(5): 3462-3470.

[35] [35] EPELBAUM B M, BICKERMANN M, NAGATA S, et al. Similarities and differences in sublimation growth of SiC and AlN［J］. J Cryst Growth, 2007, 305(2): 317-325.

[36] [36] EHRENTRAUT D, SITAR Z. Advances in bulk crystal growth of AlN and GaN［J］. MRS Bull, 2009, 34(4): 259-265.

[37] [37] HARTMANN C, DITTMAR A, WOLLWEBER J, et al. Bulk AlN growth by physical vapour transport［J］. Semicond Sci Technol, 2014, 29(8): 084002.

[38] [38] SLACK G A, MCNELLY T F. Growth of high purity AlN crystals［J］. J Cryst Growth, 1976, 34(2): 263-279.

[39] [39] SLACK G A, MCNELLY T F. Ain single crystals［J］. J Cryst Growth, 1977, 42: 560-563.

[41] [41] KARPOV S Y, ZIMINA D V, MAKAROV Y N, et al. Sublimation growth of AlN in vacuum and in a gas atmosphere［J］. Phys Status Solidi A, 1999, 176(1): 435-438.

[42] [42] SEGAL A S, KARPOV S Y, MAKAROV Y N, et al. On mechanisms of sublimation growth of AlN bulk crystals［J］. J Cryst Growth, 2000, 211(1-4): 68-72.

[43] [43] LIU L, EDGAR J H. Transport effects in the sublimation growth of aluminum nitride［J］. J Cryst Growth, 2000, 220(3): 243-253.

[44] [44] SCHOWALTER L J, SHUSTERMAN Y, WANG R, et al. Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates［J］. Appl Phys Lett, 2000, 76(8): 985-987.

[45] [45] RAGHOTHAMACHAR B, DUDLEY M, DALMAU R, et al. Synchrotron white beam X-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- and 6H-SiC seeds［J］. Mater Res Soc Symp Proc, 2005, 831: 447-452.

[46] [46] GU Z, EDGAR J H, RAGHOTHAMACHAR B, et al. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates［C］//Mater Sci Forum. Trans Tech Publications Ltd, Switzerland: 2006, 527: 1497-1500.

[47] [47] SHI Y, LIU B, LIU L, et al. New technique for sublimation growth of AlN single crystals［J］. MRS Internet J Nitride Semicond Res, 2001, 6: 5.

[48] [48] SHI Y, LIU B, LIU L, et al. Initial nucleation study and new technique for sublimation growth of AlN on SiC substrate.［J］. Phys Status Solidi A, 2001, 188(2): 757-762

[49] [49] SHI Y, XIE Z Y, LIU L H, et al. Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique［J］. J Cryst Growth. 2001, 233(1): 177-186.

[50] [50] YAMADA S, KATO J, TANAKA S, et al. Nucleation and growth kinetics of AlN films on atomically smooth 6H-SiC (0001) surfaces［J］. Appl Phys Lett, 2001, 78(23): 3612-3614.

[51] [51] ANIKIN M, CHAUSSENDE D, PERNOT E, et al. Growth of AlN and AlN-SiC solid solution by sublimation method［C］//Mater Sci Forum. Trans Tech Publications Ltd, Switzerland: 2006, 527: 1501-1504.

[52] [52] GU Z, DU L, EDGAR J H, et al. Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation［J］. MRS Internet J Nitride Semicond Res, 2005: 10.

[53] [53] GU Z, EDGAR J H, RAGHOTHAMACHAR B, et al. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer［J］. J Mater Res, 2007, 22(3): 675-680.

[54] [54] EDGAR J H, GU Z, GU L, et al. Interface properties of an AlN/(AlN)x(SiC)1-x/4H-SiC heterostructure［J］. Phys Status Solidi A, 2006, 203(15): 3720-3725.

[55] [55] NOVESKI V, SCHLESSER R, MAHAJAN S, et al. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere［J］. MRS Internet J Nitride Semicond Res, 2004: 9.

[56] [56] EDGAR J H, LIU L, LIU B, et al. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates［J］. J Cryst Growth, 2002, 246(3-4): 187-193.

[57] [57] ZHUANG D, EDGAR J H, LIU L, et al. Wet chemical etching of AlN single crystals［J］. MRS Internet J Nitride Semicond Res, 2002: 7.

[58] [58] LIU B, EDGAR J H, GU Z, et al. The durability of various crucible materials for aluminum nitride crystal growth by sublimation［J］. MRS Internet J Nitride Semicond Res, 2004: 9.

[59] [59] LU P, EDGAR J H, CAO C, et al. Bulk AlN crystal growth on SiC seeds and defects study［J］. Mater Res Soc Symp Proc, 2006: 955.

[60] [60] SUMATHI R R, BARZ R U, STRAUBINGER T, et al. Structural and surface topography analysis of AlN single crystals grown on 6H-SiC substrates［J］. J Cryst Growth, 2012, 360: 193-196.

[61] [61] BICKERMANN M, EPELBAUM B M, FILIP O, et al. Structural properties of aluminum nitride bulk single crystals grown by PVT［J］. Phys Status Solidi C, 2008, 5(6): 1502-1504.

[62] [62] FILIP O, EPELBAUM B M, BICKERMANN M, et al. Seeded growth of AlN on (0001)-plane 6H-SiC substrates［C］//Mater Sci Forum. Trans Tech Publications Ltd, Switzerland: 2009, 615: 983-986.

[63] [63] SUMATHI R R, BARZ R U, GIGLER A M, et al. Growth of AlN bulk single crystals on 4H-SiC substrates and analyses of their structural quality and growth mode evolution［J］. Phys Status Solidi A, 2012, 209(3): 415-418.

[64] [64] LU P, EDGAR J H, CAO C, et al. Seeded growth of AlN on SiC substrates and defect characterization［J］. J Cryst Growth, 2008, 310(10): 2464-2470.

[65] [65] SUMATHI R R, GILLE P. Development and progress in bulk c-plane AlN single-crystalline template growth for large-area native seeds［J］. Jpn J Appl Phys, 2013, 52(8S): 08JA02.

[66] [66] KRISHNAN SUMATHI R. Native seeding and silicon doping in bulk growth of AlN single crystals by PVT method［J］. Phys Status Solidi C, 2014, 11(3-4): 545-548.

[67] [67] CHEMEKOVA T Y, AVDEEV O V, BARASH I S, et al. Sublimation growth of 2 inch diameter bulk AlN crystals［J］. Phys Status Solidi C, 2008, 5(6): 1612-1614.

[68] [68] MOKHOV E N, WOLFSON A A. Growth of AlN and GaN crystals by sublimation［J］. Single Cryst Electron Mater, 2019: 401-445.

[69] [69] AVDEEV O V, CHEMEKOVA T Y, HELAVA H, et al. Manufacturing of bulk AlN substrates［M］//Crystal Growth Technology: Semiconductors and Dielectrics. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2010: 121-135.

[70] [70] CHRISTIANSEN K, CHRISTIANSEN S, ALBRECHT M, et al. Anisotropic oxidation of silicon carbide［J］. Diam Relat Mater, 1997, 6(10): 1467-1471.

[71] [71] HEIMANN P, PFEIFFER C, BICKERMANN M, et al. Initial growth stage in PVT growth of AlN on SiC substrates: Influence of Al2O3［J］. Phys Status Solidi C, 2007, 4(7): 2223-2226.

[72] [72] EPELBAUM B M, BICKERMANN M, WINNACKER A. Seeded PVT growth of aluminum nitride on silicon carbide［C］//Mater Sci Forum. Trans Tech Publications Ltd, Switzerland: 2003, 433: 983-986.

[73] [73] DALMAU R, SCHLESSER R, SITAR Z. Polarity and morphology in seeded growth of bulk AlN on SiC［J］. Phys Status Solidi C, 2005, 2(7): 2036-2039.

[74] [74] DALMAU R, SCHLESSER R, RODRIGUEZ B J, et al. AlN bulk crystals grown on SiC seeds［J］. J Cryst Growth, 2005, 281(1): 68-74.

[75] [75] GU Z, DU L, EDGAR J H, et al. Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation［J］. MRS Internet J Nitride Semicond Res, 2005: 10.

[76] [76] SUMATHI R R, BARZ R U, GILLE P, et al. Influence of interface formation on the structural quality of AlN single crystals grown by sublimation method［J］. Phys Status Solidi C, 2011, 8(7-8): 2107-2109.

[77] [77] SUMATHI R R. Bulk AlN single crystal growth on foreign substrate and preparation of free-standing native seeds［J］. CrystEngComm, 2013, 15(12): 2232-2240.

[78] [78] YAZDI G R, SYVJRVI M, YAKIMOVA R. Growth and morphology of AlN crystals［J］. Phys Scr, 2006, 2006(T126): 127.

[79] [79] LU P, EDGAR J H, LEE R G, et al. Nucleation of AlN on SiC substrates by seeded sublimation growth［J］. J Cryst Growth, 2007, 300(2): 336-342.

[80] [80] KAMATA H, NAOE K, SANADA K, et al. Single-crystal growth of aluminum nitride on 6H-SiC substrates by an open-system sublimation method［J］. J Cryst Growth, 2009, 311(5): 1291-1295.

[84] [84] ZHANG L, QI H, CHENG H, et al. Preparation and characterization of AlN seeds for homogeneous growth［J］. J Semicond, 2019, 40(10): 102801.

[86] [86] ZUO S, CHEN X, JIANG L, et al. Crystal growth of AlN: effect of SiC substrate［J］. Mater Sci Semicond Process, 2012, 15(4): 401-405.

[87] [87] SUMATHI R R. Status and challenges in hetero-epitaxial growth approach for large diameter AlN single crystalline substrates［J］. ECS J Solid State Sci Technol, 2021, 10(3): 035001.

[88] [88] ARGUNOVA T S, GUTKIN M Y, MOKHOV E N, et al. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates［J］. Phys Solid State, 2015, 57(12): 2473-2478.

[89] [89] MOKHOV E N, AVDEEV O V, BARASH I S, et al. Sublimation growth of AlN bulk crystals in Ta crucibles［J］. J Cryst Growth, 2005, 281(1): 93-100.

[90] [90] HEXATECH, INC. HexaTech Investment Accelerates 100 mm Diameter Aluminum Nitride Substrate Program［EB/OL］. (2022-10-04). ［2022-10-30］. https://www.hexatechinc.com/news-events.html.

[91] [91] HEXATECH, INC. HexaTech Demonstrates 2-Inch Aluminum Nitride Substrate with Absorption of 12 cm-1 at 265 nm［EB/OL］. (2021-01-19). ［2022-10-30］. https://www.hexatechinc.com/newsevents.html.