Fig. 1. （a）Cross-section of Schottky diode，（b）equivalent-circuit model

Fig. 2. Layouts of test structure （a）open, （b）short

Fig. 3. Equivalent circuit models of test structure （a）open, （b）short

Fig. 4. Layouts of test structure

Fig. 5. Equivalent circuit model under Schottky diode forward bias condition

Fig. 6. Equivalent circuit model under Schottky diode reversed bias condition

Fig. 7. Parasitic elements versus frequency in 1~40 GHz frequency range （a）pad capacitance Cp, （b）feedline inductanceLf

Fig. 8. ln（ID）versus VD

Fig. 9. Total resistance Rt versus the bias voltage VD

Fig. 10. Intrinsic elements versus the bias voltage VD （a）junction capacitance Cj, （b）junction resistance Rj

Fig. 11. Comparison of modeled and measuredIDversusVD

Fig. 12. Comparison of modeled and measured data of Schottky diode （a）real part of S₁₁ under reversed bias condition，（b）imaginary part of S₁₁ under reversed bias condition，（c）real part of S₁₁ under forward bias condition，（d）imaginary part of S₁₁ under forward bias condition

Fig. 13. Relative error of S₁₁ versus frequency