Journal of Semiconductors, Volume. 44, Issue 9, 092603(2023)

Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment

Depeng Li1,2, Jingrui Ma1,2, Wenbo Liu1,2, Guohong Xiang1,2, Xiangwei Qu1,2, Siqi Jia3、*, Mi Gu1,2, Jiahao Wei1,2, Pai Liu1,2, Kai Wang1,2, and Xiaowei Sun1,2、**
Author Affiliations
  • 1Institute of Nanoscience and Applications, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
  • 2Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology), Ministry of Education, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, Southern University of Science and Technology, Shenzhen 518055, China
  • 3Institute of Advanced Displays and Imaging, Henan Academy of Sciences, Zhengzhou 450046, China
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    Figures & Tables(6)
    (Color online) (a) Schematic illustration of the 1,8-diaminooctane ligand treatment process, (b) chemical structure (top) and graphical sketch (bottom) of the oleic acid and 1,8-diaminooctane ligand. The purple and blue balls represent the carboxyl and amine groups, respectively, and the green line is the carbon chain.
    (Color online) Characterization of the QD films. (a) UV-vis absorption spectra, (b) PL spectra and (c) time-resolved PL decay of the QD films before and after ligand treatment. The inset of (b): the corresponding PL image of the QD films under 365 nm LED excitation. (d) The PL spectra of the pristine and ligand-treated QD films rinsed with CB. The inset of (d): PL image (under 365 nm) of corresponding PL image of the QD films.
    (Color online) SEM images of the (a) pristine QD film and (b) ligand-treated QD film. AFM images of the (c) pristine QD film and (d) ligand-treated QD film.
    (Color online) Device characteristics of inverted QLED. (a) Device structure, (b) J–V–L characteristics, (c) EQE–J characteristics, and (d) EL spectra of the inverted device (at 8 V).
    (Color online) Capacitance–voltage characteristics of the inverted devices, f = 1 kHz.
    • Table 1. The device characteristics of inverted QLEDs.

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      Table 1. The device characteristics of inverted QLEDs.

      MethodVon (V)(at 1 cd/m2)Vdriving (V)(at 100 cd/m2)EQE (%)Lmax (cd/m2)
      100/1000/10 000 cd/m2Max
      w/o ligand treatment1.82.14.83/4.16/3.154.8342 980
      /w ligand treatment1.82.212.84/13.31/12.0413.34105 500
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    Depeng Li, Jingrui Ma, Wenbo Liu, Guohong Xiang, Xiangwei Qu, Siqi Jia, Mi Gu, Jiahao Wei, Pai Liu, Kai Wang, Xiaowei Sun. Enhancing performance of inverted quantum-dot light-emitting diodes based on a solution-processed hole transport layer via ligand treatment[J]. Journal of Semiconductors, 2023, 44(9): 092603

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    Paper Information

    Category: Articles

    Received: May. 21, 2023

    Accepted: --

    Published Online: Oct. 25, 2023

    The Author Email: Jia Siqi (jiasiqi12@163.com), Sun Xiaowei (sunxw@sustech.edu.cn)

    DOI:10.1088/1674-4926/44/9/092603

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