Fig. 1. Schematic of GaSb thermophotovoltaic cell model

Fig. 2. Comparison of the (a) J-V curves and (b) P-V curves in this work with that in Ref. [14]

Fig. 3. Diagrams of (a) the blackbody radiation intensity at 2000 K and (b) the complex refractive index of GaSb^[37]

Fig. 4. Diagram of J-V and P-V curves for the GaSb thermophotovoltaic cell under 2000 K blackbody radiation

Fig. 5. Diagrams of (a) the Quasi Fermi level difference and (b) the electrostatic potential in the cell

Fig. 6. Diagrams of (a) the carrier concentration and (b) the carrier generation/recombination rate in the cell

Fig. 7. Diagrams of performance characteristics of the cell under different wavelength: (a) J-V characteristic curves, (b) short-circuit current density, (c) P-V characteristic curves, (d) maximum output electric power intensity

Fig. 8. Diagrams of (a) open circuit voltage and corresponding voltage of maximum output electric power intensity, (b) filling factor and efficiency of the cell under different wavelengths

Fig. 9. Diagrams of (a) J-V and (b) P-V characteristic curves of the cell under different incident power intensities

Fig. 10. Diagrams of (a) open circuit voltage and corresponding voltage of maximum output electric power intensity, (b) filling factor and efficiency of the cell under different incident power intensities

Fig. 11. Diagram of the spectral curves for the cell efficiency under different incident power intensities