[1] [1] Gurnick M K, Detemple T A. Synthetic nonlinear semiconductors [J]. IEEE J Quantum Electron, 1983, QE-19(5): 791-794

[2] [2] Yuh P F, Wang K L. Optical second-order susceptibility of asymmetric coupled-well structures in the exciton region [J]. Appl. Phys., 1989, 65 (1): 4377-4381

[3] [3] Rosencher E, Bois Ph. Model system for optical nonlinearities:Asymmetric quantum wells [J]. Phys. Rev., 1991,B44 (20): 1135-1137

[4] [4] Ahn D, Chuang S L. Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field [J]. IEEE J Quantum Electron, 1987, QE-23 (12): 2196-2204

[5] [5] Fejer M M, Yoo S J B, Byer R L, et al. Electric field dependence of optical absorption near the band gap of quantum well structure [J]. Phys. Rev. Lett., 62 (1989) 5:1041-1045

[6] [6] Guo K X, Gu S W. Nonlinear optical rectification in parabolic quantum wells with an applied electric field [J].Phys. Rev., 1993, B47 (24) 16322-16325

[7] [7] Atanasov R, Bassani F. The optical properties of AlGaAs/GaAs hyperbolic quantum-well structures [J]. Phys.Rev., 1992, B50 (11): 7809-7817

[8] [8] Dingle R, Wiegmanm W, Henry C H. Quantum states of confined carriers in very thin AlxTa1-xAs-GaAsAlxGa1-xAs heterostructures [J]. Phys. Rev. Lett., 1974, 33 (7): 827-830

[9] [9] Khurgin J. Second-order intersubband nonlinear optical susceptibilities of asymmetric quantum well structures [C] // Optical Society of America, Washington, D C, 1989. 69-72