Journal of Semiconductors, Volume. 45, Issue 10, 102101(2024)

Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy

Pedram Jahandar* and Maksym Myronov
Author Affiliations
  • Department of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
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    Pedram Jahandar, Maksym Myronov. Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy[J]. Journal of Semiconductors, 2024, 45(10): 102101

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    Paper Information

    Category: Research Articles

    Received: Mar. 4, 2024

    Accepted: --

    Published Online: Dec. 5, 2024

    The Author Email: Jahandar Pedram (PJahandar)

    DOI:10.1088/1674-4926/24030002

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